Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 140551-FDMC5614P
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.1W (Ta), 42W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-MLP (3.3x3.3), Power33
Dimension: 8-PowerWDFN
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 5.7A (Ta), 13.5A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 1055pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 100 mOhm @ 5.7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Limited
Quantity per package: 3k pcs
MOSFET P-CH 60V 5.7A/13.5A 8MLP
P-Channel MOSFET -60V, 13.5A, 100mΩ, Surface Mount Product overview: FDMC5614P from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, SMD, -60V, 13.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, -60V, 13.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDMC5614P can be used for catalog matching and distributor lookup.
P-Channel 60V 5.7A (Ta), 13.5A (Tc) 2.1W (Ta), 42W (Tc) Surface Mount 8-MLP (3.3x3.3)
MOSFET P-CH 60V 5.7A/13.5A 8MLP
P CHANNEL MOSFET, -60V, 5.7A, POWER 33; Transistor Polarity:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:5.7A; On Resistance Rds(on):0.084ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes
Power-33-8 MOSFETs ROHS
| Win Source Electronics | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | LCSC Electronics Technology (HK) Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 140551-FDMC5614P | FDMC5614P | 278-FDMC5614P | FDMC5614PTR-ND | FDMC5614P | 75M2459 | FDMC5614P | FDMC5614P |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMC5614P | Single FETs, MOSFETs | P-Channel SMD -60V 13.5A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | P Channel Mosfet, -60V, 5.7A, Power 33; Transistor Polarity Onsemi | Triode/MOS Tube/Transistor >> MOSFETs | MOSFET |
| Polarity | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | |||
| V(BR)DSS | 60 volts | 60 volts | ||||||
| PD | 2100 to 42000 milliwatts | 2100 milliwatts | 42000 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | |||||
| Package Type | SOT3; 8-MLP (3.3x3.3), Power33 | 8-PowerWDFN | 8-PowerWDFN | 8-PowerWDFN | TO-3 |
