MOSFET P-CH 30V 8.5A/18A 8MLP
P-Channel 30V 8.5A (Ta), 18A (Tc) 2.3W (Ta), 31W (Tc) Surface Mount 8-MLP (3.3x3.3)
P-Channel 30V 8.5A (Ta), 18A (Tc) 2.3W (Ta), 31W (Tc) Surface Mount 8-MLP (3.3x3.3)
P-Channel 30V 8.5A (Ta), 18A (Tc) 2.3W (Ta), 31W (Tc) Surface Mount 8-MLP (3.3x3.3)
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016025-FDMC4435BZ
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.3W (Ta), 31W (Tc)
Family Name: FDMC4435BZ
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-MLP (3.3x3.3), Power33
Dimension: 8-PowerWDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 8.5A (Ta), 18A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 46nC @ 10V
Max Input Capacitance: 2045pF @ 15V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 20 mOhm @ 8.5A, 10V
Alternative Parts (Cross-Reference): DMP3036SFG-13; DMP3036SFG-7; STL6P3LLH6;
Introduction Date: November 07, 2007
ECCN: EAR99
Country of Origin: Philippines, United States of America
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Limited
Quantity per package: 3k pcs
MOSFET P-CH 30V 8.5A/18A 8MLP
MOSFET, P CH, 30V, 18A, MLP 3.3X3.3; Transistor Polarity:P Channel; Continuous Drain Current Id:-18A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.015ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.9V RoHS Compliant: Yes
MOSFET, P CHANNEL, -30V, 0.015OHM, -18A, MLP-8, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:18A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:31W RoHS Compliant: Yes
MOSFET, P CHANNEL, -30V, 0.015OHM, -18A, MLP-8; Transistor Polarity:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:18A; On Resistance Rds(on):0.015ohm; Transistor Mounting:Surface Mount; Power Dissipation Pd:31WRoHS Compliant: Yes
MOSFET -30V P-Channel PowerTrench
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDMC4435BZ | FDMC4435BZDKR-ND | 016025-FDMC4435BZ | FDMC4435BZ | 88T3261 | 08N9280 | 85W3142 | FDMC4435BZ |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMC4435BZ | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P Ch, 30V, 18A, Mlp 3.3X3.3; Transistor Polarity Onsemi | Mosfet, P Channel, -30V, 0.015Ohm, -18A, Mlp-8, Full Reel; Channel Type Onsemi | Mosfet, P Channel, -30V, 0.015Ohm, -18A, Mlp-8; Transistor Polarity Onsemi | MOSFET |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 30 volts | 30 volts | ||||||
| IDSS | 8500 milliamps | -18000 milliamps | 18000 milliamps | 18000 milliamps | ||||
| PD | 2300 milliwatts | 2300 to 31000 milliwatts | 31000 milliwatts | 31000 milliwatts |
