MOSFETs 200V N-Ch UltraFET PowerTrench MOSFET Product overview: FDMC2610 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDMC2610 can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016022-FDMC2610
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.1W (Ta), 42W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-MLP (3.3x3.3)
Dimension: 8-PowerWDFN
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 2.2A (Ta), 9.5A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 18nC @ 10V
Max Input Capacitance: 960pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 200 mOhm @ 2.2A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited
Quantity per package: 3k pcs
N-Channel 200V 2.2A (Ta), 9.5A (Tc) 2.1W (Ta), 42W (Tc) Surface Mount 8-MLP (3.3x3.3)
N-Channel 200V 2.2A (Ta), 9.5A (Tc) 2.1W (Ta), 42W (Tc) Surface Mount 8-MLP (3.3x3.3)
N-Channel 200V 2.2A (Ta), 9.5A (Tc) 2.1W (Ta), 42W (Tc) Surface Mount 8-MLP (3.3x3.3)
MOSFET N-CH 200V 2.2A/9.5A 8MLP
MOSFET N-CH 200V 2.2A/9.5A 8MLP
MOSFET 200V N-Ch UltraFET PowerTrench MOSFET
MOSFET, N CHANNEL,30V, 14A, MLP; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:2.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.2V RoHS Compliant: Yes
N CH MOSFET, 200V, 9.5A, POWER 33, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:9.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:42W RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2088-FDMC2610 | 016022-FDMC2610 | FDMC2610TR-ND | FDMC2610 | FDMC2610 | FDMC2610 | 87W8823 | 20M1169 |
| Product Name | 200V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMC2610 | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N Channel,30V, 14A, Mlp; Channel Type Onsemi | N Ch Mosfet, 200V, 9.5A, Power 33, Full Reel; Channel Type Onsemi |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | |||||||
| Transconductance | 0.0070 kS | |||||||
| PD | 2.1 milliwatts | 2100 to 42000 milliwatts | 2100 milliwatts | 42000 milliwatts | ||||
| Package Type | Reel | SOT3; 8-MLP (3.3x3.3) | 8-PowerWDFN | 8-PowerWDFN | 8-PowerWDFN | TO-3 | TO-3 |
