onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMC2610 FDMC2610

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016022-FDMC2610 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.1W (Ta), 42W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-MLP (3.3x3.3) Dimension: 8-PowerWDFN Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 2.2A (Ta), 9.5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 18nC @ 10V Max Input Capacitance: 960pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 200 mOhm @ 2.2A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited Quantity per package: 3k pcs
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMC2610 - 016022-FDMC2610 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FDMC2610 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - FDMC2610TR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - FDMC2610CT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - FDMC2610DKR-ND - DigiKey
    DigiKey
  • Mosfet, N Channel,30V, 14A, Mlp; Channel Type Onsemi - 87W8823 - Newark, An Avnet Company
    Newark, An Avnet Company
  • N Ch Mosfet, 200V, 9.5A, Power 33, Full Reel; Channel Type Onsemi - 20M1169 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDMC2610 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016022-FDMC2610 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.1W (Ta), 42W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-MLP (3.3x3.3) Dimension: 8-PowerWDFN Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 2.2A (Ta), 9.5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 18nC @ 10V Max Input Capacitance: 960pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 200 mOhm @ 2.2A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited Quantity per package: 3k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMC2610 - 016022-FDMC2610 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMC2610
016022-FDMC2610
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMC2610 016022-FDMC2610
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016022-FDMC2610 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.1W (Ta), 42W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-MLP (3.3x3.3) Dimension: 8-PowerWDFN Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 2.2A (Ta), 9.5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 18nC @ 10V Max Input Capacitance: 960pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 200 mOhm @ 2.2A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016022-FDMC2610
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.1W (Ta), 42W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-MLP (3.3x3.3)
Dimension: 8-PowerWDFN
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 2.2A (Ta), 9.5A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 18nC @ 10V
Max Input Capacitance: 960pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 200 mOhm @ 2.2A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited
Quantity per package: 3k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FDMC2610 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDMC2610
Single FETs, MOSFETs FDMC2610
MOSFET N-CH 200V 2.2A/9.5A 8MLP

MOSFET N-CH 200V 2.2A/9.5A 8MLP

Supplier's Site Datasheet
Single FETs, MOSFETs - FDMC2610TR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMC2610TR-ND
Single FETs, MOSFETs FDMC2610TR-ND
N-Channel 200V 2.2A (Ta), 9.5A (Tc) 2.1W (Ta), 42W (Tc) Surface Mount 8-MLP (3.3x3.3)

N-Channel 200V 2.2A (Ta), 9.5A (Tc) 2.1W (Ta), 42W (Tc) Surface Mount 8-MLP (3.3x3.3)

Buy Now Datasheet
Single FETs, MOSFETs - FDMC2610CT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMC2610CT-ND
Single FETs, MOSFETs FDMC2610CT-ND
N-Channel 200V 2.2A (Ta), 9.5A (Tc) 2.1W (Ta), 42W (Tc) Surface Mount 8-MLP (3.3x3.3)

N-Channel 200V 2.2A (Ta), 9.5A (Tc) 2.1W (Ta), 42W (Tc) Surface Mount 8-MLP (3.3x3.3)

Buy Now Datasheet
Single FETs, MOSFETs - FDMC2610DKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMC2610DKR-ND
Single FETs, MOSFETs FDMC2610DKR-ND
N-Channel 200V 2.2A (Ta), 9.5A (Tc) 2.1W (Ta), 42W (Tc) Surface Mount 8-MLP (3.3x3.3)

N-Channel 200V 2.2A (Ta), 9.5A (Tc) 2.1W (Ta), 42W (Tc) Surface Mount 8-MLP (3.3x3.3)

Buy Now Datasheet
Mosfet, N Channel,30V, 14A, Mlp; Channel Type Onsemi - 87W8823 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel,30V, 14A, Mlp; Channel Type Onsemi
87W8823
Mosfet, N Channel,30V, 14A, Mlp; Channel Type Onsemi 87W8823
MOSFET, N CHANNEL,30V, 14A, MLP; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:2.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.2V RoHS Compliant: Yes

MOSFET, N CHANNEL,30V, 14A, MLP; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:2.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.2V RoHS Compliant: Yes

Supplier's Site
N Ch Mosfet, 200V, 9.5A, Power 33, Full Reel; Channel Type Onsemi - 20M1169 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Ch Mosfet, 200V, 9.5A, Power 33, Full Reel; Channel Type Onsemi
20M1169
N Ch Mosfet, 200V, 9.5A, Power 33, Full Reel; Channel Type Onsemi 20M1169
N CH MOSFET, 200V, 9.5A, POWER 33, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:9.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:42W RoHS Compliant: Yes

N CH MOSFET, 200V, 9.5A, POWER 33, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:9.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:42W RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDMC2610 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDMC2610
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDMC2610
MOSFET N-CH 200V 2.2A/9.5A 8MLP

MOSFET N-CH 200V 2.2A/9.5A 8MLP

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FDMC2610
MOSFET FDMC2610
MOSFET 200V N-Ch UltraFET PowerTrench MOSFET

MOSFET 200V N-Ch UltraFET PowerTrench MOSFET

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Newark, An Avnet Company Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 016022-FDMC2610 FDMC2610 FDMC2610TR-ND 87W8823 20M1169 FDMC2610 FDMC2610
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMC2610 Single FETs, MOSFETs Single FETs, MOSFETs Mosfet, N Channel,30V, 14A, Mlp; Channel Type Onsemi N Ch Mosfet, 200V, 9.5A, Power 33, Full Reel; Channel Type Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 200 volts 200 volts
PD 2100 to 42000 milliwatts 2100 milliwatts 42000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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