N-Channel Shielded Gate PowerTrench® MOSFET 80 V, 64A, 6.8mΩ, 3000-REEL Product overview: FDMC007N08LCDC from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 80 V, 64A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80 V, 64A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDMC007N08LCDC can be used for catalog matching and distributor lookup.
N-Channel 80V 64A (Tc) 57W (Tc) Surface Mount 8-PQFN (3.3x3.3)
N-Channel 80V 64A (Tc) 57W (Tc) Surface Mount 8-PQFN (3.3x3.3)
N-Channel 80V 64A (Tc) 57W (Tc) Surface Mount 8-PQFN (3.3x3.3)
Win Source Part Number: 1058805-FDMC007N08LC
Category: Discrete Semiconductor Products>Transistors
Series: PowerTrench®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 22A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 130µA
Power Dissipation (Max): 57W (Tc)
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PQFN (3.3x3.3)
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3070 pF @ 40 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 51 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Other Names: FDMC007N08LCDCOSDKR,
Base Product Number: FDMC007
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
MOSFET N-CH 80V 64A 8PQFN
MOSFET N-CH 80V 64A 8PQFN
MOSFET, N-CH, 80V, 64A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:64A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0051ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Power Dissipation RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-FDMC007N08LCDC | FDMC007N08LCDCOSDKR-ND | 1058805-FDMC007N08LCDC | FDMC007N08LCDC | FDMC007N08LCDC | FDMC007N08LCDC | 62AC6872 |
| Product Name | N-Channel 80 V 64A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 80V, 64A, Pqfn; Transistor Polarity Onsemi |
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| Package Type | 8-PowerWDFN | SOT3 | 8-PowerWDFN | Surface Mount | TO-3 | ||
| PD | 57000 milliwatts | 57000 milliwatts | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
