MOSFET 2N-CH 25V 7A 8MLP MICRO
Mosfet Array 2 N-Channel (Dual) 25V 7A 800mW Surface Mount 8-MLP, MicroFET (3x1.9)
Manufacturer: ON Semiconductor
Win Source Part Number: 800603-FDMB3900AN
Packaging: Reel
Mounting Style: SMD
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Power - Max: 800mW
Supplier Device Package: 8-MLP, MicroFET (3x1.9)
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 8-PowerWDFN
Popularity: High
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 23mOhm at 7A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 17nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 890pF at 13V
Current - Continuous Drain (Id) at 25°C: 7A
Vgs(th) (Maximum) at Id: 3V at 250μA
MOSFET 2N-CH 25V 7A 8MLP MICRO
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDMB3900AN | FDMB3900ANTR-ND | 800603-FDMB3900AN | FDMB3900AN | FDMB3900AN |
| Product Name | FET, MOSFET Arrays | FET, MOSFET Arrays | FETs - Arrays - FDMB3900AN | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 25 volts | ||||
| IDSS | 7000 milliamps |
