P-Channel 12V 12A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2)
P-Channel 12V 12A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2)
P-Channel 12V 12A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2)
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038187-FDMA908PZ
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.4W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-MicroFET (2x2)
Dimension: 6-WDFN Exposed Pad
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 12A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 34nC @ 4.5V
Max Input Capacitance: 3957pF @ 6V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 12.5 mOhm @ 12A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Sufficient
Quantity per package: 3k pcs
MOSFET P-CH 12V 12A 6MICROFET
MOSFET, P-CH, -12V, -12A, MICROFET-6; Channel Type:P Channel; Drain Source Voltage Vds:-12V; Continuous Drain Current Id:-12A; Rds(on) Test Voltage:-4.5V; Gate Source Threshold Voltage Max:-600mV; Power Dissipation:2.4W RoHS Compliant: Yes
MOSFET P-CH 12V 12A 6MICROFET
| DigiKey | Win Source Electronics | ODG (Origin Data Global) | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FDMA908PZCT-ND | 1038187-FDMA908PZ | FDMA908PZ | 46AC0778 | FDMA908PZ | FDMA908PZ |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMA908PZ | Single FETs, MOSFETs | Mosfet, P-Ch, -12V, -12A, Microfet-6; Channel Type Onsemi | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | |||
| Package Type | 6-WDFN Exposed Pad | SOT3; 6-MicroFET (2x2) | 6-WDFN Exposed Pad | TO-3 | 6-WDFN Exposed Pad | |
| V(BR)DSS | 12 volts | 12 volts | ||||
| PD | 2400 milliwatts | 2400 milliwatts | 2400 milliwatts |
