Manufacturer: ON Semiconductor
Win Source Part Number: 919013-FDMA86265P
Series: PowerTrench®
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: P-Channel 150 V 1A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2)
Package: 6-WDFN Exposed Pad
Package: Reel - TR
Mounting: Surface Mount
Family Name: FDMA86265
Categories: Discrete Semiconductor Products
Case / Package: 6-MicroFET (2x2)
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 91 pct.
Supply and Demand Status: Balance
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 46 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: FDMA86265PCT, FDMA86265PDKR, 1990-FDMA86265PCT, 1990-FDMA86265PTR, FDMA86265PTR, 1990-FDMA86265PDKR
P-Channel 150V 1A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2)
P-Channel 150V 1A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2)
P-Channel 150V 1A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2)
MOSFET P-CH 150V 1A 6MICROFET
MOSFET P-CH 150V 1A 6MICROFET
MOSFET, P-CH, -150V, -1A, MICROFET-6; Transistor Polarity:P Channel; Continuous Drain Current Id:-1A; Drain Source Voltage Vds:-150V; On Resistance Rds(on):0.86ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3.2V; Power RoHS Compliant: Yes
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 919013-FDMA86265P | FDMA86265PCT-ND | FDMA86265P | FDMA86265P | FDMA86265P | 46AC0776 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMA86265P | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, P-Ch, -150V, -1A, Microfet-6; Transistor Polarity Onsemi |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | SOT3; 6-MicroFET (2x2) | 6-WDFN Exposed Pad | 6-WDFN Exposed Pad | 6-WDFN Exposed Pad | TO-3 | |
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 150 volts |
