MOSFET N-CH 100V 3.3A 6MICROFET
Win Source Part Number: 1017561-FDMA86151L
Category: Discrete Semiconductor Products>Transistors
Series: PowerTrench®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Rds On (Max) @ Id, Vgs: 88mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.4W (Ta)
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-MicroFET (2x2)
Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 50 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 72 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Other Names: FDMA86151LTR,FDMA861
Base Product Number: FDMA86151
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
N-Channel 100V 3.3A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2)
N-Channel 100V 3.3A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2)
N-Channel 100V 3.3A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2)
MOSFETs 100 V Single N-Channel PowerTrench MOSFET Product overview: FDMA86151L from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100 V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDMA86151L can be used for catalog matching and distributor lookup.
MOSFET N-CH 100V 3.3A 6MICROFET
MOSFET, N-CH, 3.3A, 100V, WDFN; Transistor Polarity:N Channel; Continuous Drain Current Id:3.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.06ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation RoHS Compliant: Yes
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDMA86151L | 1017561-FDMA86151L | FDMA86151LTR-ND | 2088-FDMA86151L | FDMA86151L | 07AH3910 | FDMA86151L |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | N-Channel 100 V MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 3.3A, 100V, Wdfn; Transistor Polarity Onsemi | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 100 volts | ||||||
| IDSS | 3300 milliamps | 3300 milliamps | |||||
| PD | 2400 milliwatts | 2400 milliwatts | 2.4 milliwatts |
