N-Channel 40V 10A (Tc) 2.4W (Ta) Surface Mount 6-MicroFET (2x2)
N-Channel 40V 10A (Tc) 2.4W (Ta) Surface Mount 6-MicroFET (2x2)
N-Channel 40V 10A (Tc) 2.4W (Ta) Surface Mount 6-MicroFET (2x2)
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 115989-FDMA8051L
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.4W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-MicroFET (2x2)
Dimension: 6-WDFN Exposed Pad
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 10A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 1260pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 14 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs
MOSFET N-CH 40V 10A 6MICROFET
MOSFET, N-CH, 40V, 10A, 2.4W, WDFN; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.011ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power RoHS Compliant: Yes
| DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDMA8051LCT-ND | 115989-FDMA8051L | FDMA8051L | 99AC9164 | FDMA8051L |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMA8051L | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 40V, 10A, 2.4W, Wdfn; Transistor Polarity Onsemi | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | |||
| Package Type | 6-WDFN Exposed Pad | SOT3; 6-MicroFET (2x2) | 6-WDFN Exposed Pad | TO-3 | |
| V(BR)DSS | 40 volts | ||||
| PD | 2400 milliwatts |
