MOSFET P-CH 30V 11A 6MICROFET
Manufacturer: onsemi
Win Source Part Number: 1324752-FDMA6676PZ
Category: Discrete Semiconductor Products>Transistors
Packaging: Reel
Standard Package: 3,000
Mounting: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 11A
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Power Dissipation (Max): 2.4W
Supplier Device Package: 6-MicroFET (2x2)
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 15 V
Vgs (Max): ±25V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: 6-PowerWDFN
ECCN: EAR99
Fake Threat In the Open Market: 83
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: FDMA6676PZTR,FDMA667
Base Product Number: FDMA6676
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
RoHS Status: ROHS3 Compliant
MOSFET P-CH 30V 11A 6MICROFET
MOSFET P-CH 30V 11A 6MICROFET
MOSFET, P-CH, -30V, -11A, 150DEG C, 2.4W; Transistor Polarity:P Channel; Continuous Drain Current Id:-11A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.011ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2V; PowerRoHS Compliant: Yes
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDMA6676PZ | 1324752-FDMA6676PZ | FDMA6676PZTR-ND | FDMA6676PZ | 74AC0901 | FDMA6676PZ |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P-Ch, -30V, -11A, 150Deg C, 2.4W; Transistor Polarity Onsemi | MOSFET |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 30 volts | |||||
| IDSS | 11000 milliamps | -11000 milliamps | ||||
| PD | 2400 milliwatts | 2400 milliwatts |
