onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMA530PZ FDMA530PZ

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016014-FDMA530PZ Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.4W (Ta) Family Name: FDMA530PZ Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-MicroFET (2x2) Dimension: 6-VDFN Exposed Pad Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 6.8A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 24nC @ 10V Max Input Capacitance: 1070pF @ 15V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 35 mOhm @ 6.8A, 10V Alternative Parts (Cross-Reference): SiA421DJ-T1-GE3; SiA421DJ-T4-GE3; SiA421DJ; DMP3028LFDE-7; Introduction Date: August 18, 2006 ECCN: EAR99 Country of Origin: Thailand Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Limited Application Field: Used in Power Management, Portable Devices, Consumer Electronics, Communications & Networking Quantity per package: 3k pcs
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016014-FDMA530PZ Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.4W (Ta) Family Name: FDMA530PZ Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-MicroFET (2x2) Dimension: 6-VDFN Exposed Pad Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 6.8A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 24nC @ 10V Max Input Capacitance: 1070pF @ 15V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 35 mOhm @ 6.8A, 10V Alternative Parts (Cross-Reference): SiA421DJ-T1-GE3; SiA421DJ-T4-GE3; SiA421DJ; DMP3028LFDE-7; Introduction Date: August 18, 2006 ECCN: EAR99 Country of Origin: Thailand Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Limited Application Field: Used in Power Management, Portable Devices, Consumer Electronics, Communications & Networking Quantity per package: 3k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMA530PZ - 016014-FDMA530PZ - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMA530PZ
016014-FDMA530PZ
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMA530PZ 016014-FDMA530PZ
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016014-FDMA530PZ Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.4W (Ta) Family Name: FDMA530PZ Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-MicroFET (2x2) Dimension: 6-VDFN Exposed Pad Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 6.8A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 24nC @ 10V Max Input Capacitance: 1070pF @ 15V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 35 mOhm @ 6.8A, 10V Alternative Parts (Cross-Reference): SiA421DJ-T1-GE3; SiA421DJ-T4-GE3; SiA421DJ; DMP3028LFDE-7; Introduction Date: August 18, 2006 ECCN: EAR99 Country of Origin: Thailand Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Limited Application Field: Used in Power Management, Portable Devices, Consumer Electronics, Communications & Networking Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016014-FDMA530PZ
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.4W (Ta)
Family Name: FDMA530PZ
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-MicroFET (2x2)
Dimension: 6-VDFN Exposed Pad
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6.8A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 24nC @ 10V
Max Input Capacitance: 1070pF @ 15V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 35 mOhm @ 6.8A, 10V
Alternative Parts (Cross-Reference): SiA421DJ-T1-GE3; SiA421DJ-T4-GE3; SiA421DJ; DMP3028LFDE-7;
Introduction Date: August 18, 2006
ECCN: EAR99
Country of Origin: Thailand
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management, Portable Devices, Consumer Electronics, Communications & Networking
Quantity per package: 3k pcs

Buy Now Datasheet
Singapore, Singapore
MOSFET Transistor
278-FDMA530PZ
MOSFET Transistor 278-FDMA530PZ
POWER FIELD-EFFECT TRANSISTOR, 6 Product overview: FDMA530PZ from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDMA530PZ can be used for catalog matching and distributor lookup.

POWER FIELD-EFFECT TRANSISTOR, 6 Product overview: FDMA530PZ from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDMA530PZ can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - FDMA530PZDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMA530PZDKR-ND
Single FETs, MOSFETs FDMA530PZDKR-ND
P-Channel 30V 6.8A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2)

P-Channel 30V 6.8A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2)

Buy Now Datasheet
Single FETs, MOSFETs - FDMA530PZTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMA530PZTR-ND
Single FETs, MOSFETs FDMA530PZTR-ND
P-Channel 30V 6.8A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2)

P-Channel 30V 6.8A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2)

Buy Now Datasheet
Single FETs, MOSFETs - FDMA530PZCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDMA530PZCT-ND
Single FETs, MOSFETs FDMA530PZCT-ND
P-Channel 30V 6.8A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2)

P-Channel 30V 6.8A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2)

Buy Now Datasheet
P Mosfet, -30V, 6.8A, Microfet 2X2; Channel Type Onsemi - 67P3476 - Newark, An Avnet Company
Chicago, IL, United States
P Mosfet, -30V, 6.8A, Microfet 2X2; Channel Type Onsemi
67P3476
P Mosfet, -30V, 6.8A, Microfet 2X2; Channel Type Onsemi 67P3476
P MOSFET, -30V, 6.8A, MICROFET 2X2; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:6.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:25V; Gate Source Threshold Voltage Max:2.1V RoHS Compliant: Yes

P MOSFET, -30V, 6.8A, MICROFET 2X2; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:6.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:25V; Gate Source Threshold Voltage Max:2.1V RoHS Compliant: Yes

Supplier's Site
P Mosfet, -30V, 6.8A, Microfet 2X2, Full Reel; Channel Type Onsemi - 52M3177 - Newark, An Avnet Company
Chicago, IL, United States
P Mosfet, -30V, 6.8A, Microfet 2X2, Full Reel; Channel Type Onsemi
52M3177
P Mosfet, -30V, 6.8A, Microfet 2X2, Full Reel; Channel Type Onsemi 52M3177
P MOSFET, -30V, 6.8A, MICROFET 2X2, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:6.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:25V; Power Dissipation:2.4W RoHS Compliant: Yes

P MOSFET, -30V, 6.8A, MICROFET 2X2, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:6.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:25V; Power Dissipation:2.4W RoHS Compliant: Yes

Supplier's Site Datasheet
Single FETs, MOSFETs - FDMA530PZ - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDMA530PZ
Single FETs, MOSFETs FDMA530PZ
MOSFET P-CH 30V 6.8A 6MICROFET

MOSFET P-CH 30V 6.8A 6MICROFET

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDMA530PZ - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDMA530PZ
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDMA530PZ
MOSFET P-CH 30V 6.8A 6MICROFET

MOSFET P-CH 30V 6.8A 6MICROFET

Supplier's Site
Sheung Wan, Hong Kong
MOSFET -30V P-Ch PowerTrench MOSFET

MOSFET -30V P-Ch PowerTrench MOSFET

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Newark, An Avnet Company Newark, An Avnet Company ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 016014-FDMA530PZ 278-FDMA530PZ FDMA530PZDKR-ND 67P3476 52M3177 FDMA530PZ FDMA530PZ FDMA530PZ
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMA530PZ MOSFET Transistor Single FETs, MOSFETs P Mosfet, -30V, 6.8A, Microfet 2X2; Channel Type Onsemi P Mosfet, -30V, 6.8A, Microfet 2X2, Full Reel; Channel Type Onsemi Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity P-Channel; P-Channel P-Channel P-Channel P-Channel; P-Channel
V(BR)DSS 30 volts 30 volts
PD 2400 milliwatts 2.4 milliwatts 2400 milliwatts 2400 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; 6-MicroFET (2x2) Bulk 6-WDFN Exposed Pad TO-3 TO-3 6-WDFN Exposed Pad 6-WDFN Exposed Pad
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