Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 107887-FDMA410NZ
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.4W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-MicroFET (2x2)
Dimension: 6-VDFN Exposed Pad
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 9.5A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 14nC @ 4.5V
Max Input Capacitance: 1080pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 23 mOhm @ 9.5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs
MOSFET N-CH 20V 9.5A 6MICROFET
SMALL SIGNAL FIELD-EFFECT TRANSI
MOSFETs 20V Single N-Ch 1.5V Specified PowerTrnch Product overview: FDMA410NZ from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 1.5V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 1.5V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDMA410NZ can be used for catalog matching and distributor lookup.
N-Channel 20V 9.5A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2)
N-Channel 20V 9.5A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2)
N-Channel 20V 9.5A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2)
MOSFET N-CH 20V 9.5A 6MICROFET
MOSFET 20V Single N-Ch 1.5V Specified PowerTrnch
MOSFET Transistor; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:9.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:700mV; Power Dissipation:900mWRoH
MOSFET, N-CH, 20V, 9.5A, MICROFET-6; Transistor Polarity:N Channel; Continuous Drain Current Id:9.5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.017ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:700mV; Power RoHS Compliant: Yes
| Win Source Electronics | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 107887-FDMA410NZ | FDMA410NZ | 2088-FDMA410NZ | FDMA410NZDKR-ND | FDMA410NZ | FDMA410NZ | 07R8501 | 46AC0775 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMA410NZ | Single FETs, MOSFETs | 20V 1.5V MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet Transistor; Channel Type Onsemi | Mosfet, N-Ch, 20V, 9.5A, Microfet-6; Transistor Polarity Onsemi |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| V(BR)DSS | 20 volts | 20 volts | ||||||
| PD | 2400 milliwatts | 2400 milliwatts | 2.4 milliwatts | 900 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||
| Package Type | SOT3; 6-MicroFET (2x2) | 6-WDFN Exposed Pad | Reel | 6-WDFN Exposed Pad | Surface Mount | TO-3 | TO-3 |
