MOSFET N-CH 100V 4.4A 8MLP
MOSFETs 100V N-Ch PowerTrench MOSFET Product overview: FDM3622 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDM3622 can be used for catalog matching and distributor lookup.
N-Channel 100V 4.4A (Ta) 2.1W (Ta) Surface Mount 8-MLP (3.3x3.3)
N-Channel 100V 4.4A (Ta) 2.1W (Ta) Surface Mount 8-MLP (3.3x3.3)
N-Channel 100V 4.4A (Ta) 2.1W (Ta) Surface Mount 8-MLP (3.3x3.3)
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016001-FDM3622
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-MLP (3.3x3.3)
Dimension: 8-PowerWDFN
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 4.4A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 17nC @ 10V
Max Input Capacitance: 1090pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 60 mOhm @ 4.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs
MOSFET N-CH 100V 4.4A 8MLP
MOSFET 100V N-Ch PowerTrench MOSFET
MOSFET, N CHANNEL, 100V, 4.4A, POWER33; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
N CHANNEL MOSFET, 100V, 4.4A, POWER 33, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:2.1W RoHS Compliant: Yes
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDM3622 | 2088-FDM3622 | FDM3622DKR-ND | 016001-FDM3622 | FDM3622 | FDM3622 | 87W8826 | 64K0972 |
| Product Name | Single FETs, MOSFETs | 100V MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDM3622 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N Channel, 100V, 4.4A, Power33; Channel Type Onsemi | N Channel Mosfet, 100V, 4.4A, Power 33, Full Reel; Channel Type Onsemi |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 100 volts | 100 volts | ||||||
| IDSS | 4400 milliamps | 4400 milliamps | 4400 milliamps | |||||
| PD | 2100 milliwatts | 2.1 milliwatts | 2100 milliwatts | 2100 milliwatts |
