Manufacturer: Fairchild Semiconductor
Win Source Part Number: 1325373-FDI8441
Category: Discrete Semiconductor Products>Transistors
Packaging: Tube
Standard Package: 400
Mounting: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 26A, 80A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Supplier Device Package: I2PAK (TO-262)
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Case / Package: TO-262-3 Long Leads, I²Pak, TO-262AA
ECCN: EAR99
Fake Threat In the Open Market: 76
HTSUS: 8541.29.0095
Other Part Number: FAIFSCFDI8441,2156-F
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
RoHS Status: ROHS3 Compliant
MOSFET N-CH 40V 26A/80A I2PAK
| Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1325373-FDI8441 | FDI8441 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel |