onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FDI8441

Description
Manufacturer: Fairchild Semiconductor Win Source Part Number: 1325373-FDI8441 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 400 Mounting: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 26A, 80A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 300W (Tc) Supplier Device Package: I2PAK (TO-262) Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) Case / Package: TO-262-3 Long Leads, I²Pak, TO-262AA ECCN: EAR99 Fake Threat In the Open Market: 76 HTSUS: 8541.29.0095 Other Part Number: FAIFSCFDI8441,2156-F DI8441-FS Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V RoHS Status: ROHS3 Compliant
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Description
Manufacturer: Fairchild Semiconductor Win Source Part Number: 1325373-FDI8441 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 400 Mounting: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 26A, 80A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 300W (Tc) Supplier Device Package: I2PAK (TO-262) Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) Case / Package: TO-262-3 Long Leads, I²Pak, TO-262AA ECCN: EAR99 Fake Threat In the Open Market: 76 HTSUS: 8541.29.0095 Other Part Number: FAIFSCFDI8441,2156-F DI8441-FS Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V RoHS Status: ROHS3 Compliant
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1325373-FDI8441 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1325373-FDI8441
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1325373-FDI8441
Manufacturer: Fairchild Semiconductor Win Source Part Number: 1325373-FDI8441 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 400 Mounting: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 26A, 80A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 300W (Tc) Supplier Device Package: I2PAK (TO-262) Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) Case / Package: TO-262-3 Long Leads, I²Pak, TO-262AA ECCN: EAR99 Fake Threat In the Open Market: 76 HTSUS: 8541.29.0095 Other Part Number: FAIFSCFDI8441,2156-F DI8441-FS Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V RoHS Status: ROHS3 Compliant

Manufacturer: Fairchild Semiconductor
Win Source Part Number: 1325373-FDI8441
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Tube
Standard Package: 400
Mounting: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 26A, 80A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Supplier Device Package: I2PAK (TO-262)
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Case / Package: TO-262-3 Long Leads, I²Pak, TO-262AA
ECCN: EAR99
Fake Threat In the Open Market: 76
HTSUS: 8541.29.0095
Other Part Number: FAIFSCFDI8441,2156-FDI8441-FS
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
RoHS Status: ROHS3 Compliant

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDI8441 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDI8441
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDI8441
MOSFET N-CH 40V 26A/80A I2PAK

MOSFET N-CH 40V 26A/80A I2PAK

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1325373-FDI8441 FDI8441
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
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