onsemi Single FETs, MOSFETs FDI3652

Description
N-Channel 100V 9A (Ta), 61A (Tc) 150W (Tc) Through Hole I2PAK (TO-262)
Request a Quote Datasheet
Description
N-Channel 100V 9A (Ta), 61A (Tc) 150W (Tc) Through Hole I2PAK (TO-262)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDI3652-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDI3652-ND
Single FETs, MOSFETs FDI3652-ND
N-Channel 100V 9A (Ta), 61A (Tc) 150W (Tc) Through Hole I2PAK (TO-262)

N-Channel 100V 9A (Ta), 61A (Tc) 150W (Tc) Through Hole I2PAK (TO-262)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDI3652 - 040259-FDI3652 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDI3652
040259-FDI3652
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDI3652 040259-FDI3652
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 040259-FDI3652 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 150W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-262AA Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 9A (Ta), 61A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 53nC @ 10V Max Input Capacitance: 2880pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 16 mOhm @ 61A, 10V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 040259-FDI3652
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 150W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-262AA
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 9A (Ta), 61A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 53nC @ 10V
Max Input Capacitance: 2880pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 16 mOhm @ 61A, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDI3652 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDI3652
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDI3652
MOSFET N-CH 100V 9A/61A I2PAK

MOSFET N-CH 100V 9A/61A I2PAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDI3652-ND 040259-FDI3652 FDI3652
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDI3652 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-262-3 Long Leads, I2PAK, TO-262AA SOT3; TO-262AA TO-262-3 Long Leads, I2PAK, TO-262AA
Transistor Grade / Operating Range Automotive
V(BR)DSS 100 volts
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