onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDI3652 FDI3652

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 040259-FDI3652
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 150W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-262AA
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 9A (Ta), 61A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 53nC @ 10V
Max Input Capacitance: 2880pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 16 mOhm @ 61A, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Limited

Trans MOSFET N-CH 100V 9A 3-Pin(3+Tab) TO-262AA Rail Product overview: FDI3652 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDI3652 can be used for catalog matching and distributor lookup.

N-Channel 100V 9A (Ta), 61A (Tc) 150W (Tc) Through Hole I2PAK (TO-262)