Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 040259-FDI3652
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 150W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-262AA
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 9A (Ta), 61A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 53nC @ 10V
Max Input Capacitance: 2880pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 16 mOhm @ 61A, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Limited
N-Channel 100V 9A (Ta), 61A (Tc) 150W (Tc) Through Hole I2PAK (TO-262)
MOSFET N-CH 100V 9A/61A I2PAK
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 040259-FDI3652 | FDI3652-ND | FDI3652 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDI3652 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | |
| V(BR)DSS | 100 volts | ||
| PD | 150000 milliwatts | ||
| TJ | -55 to 175 C (-67 to 347 F) |
