onsemi Single FETs, MOSFETs FDI2532

Description
N-Channel 150V 8A (Ta), 79A (Tc) 310W (Tc) Through Hole I2PAK (TO-262)
Request a Quote Datasheet
Description
N-Channel 150V 8A (Ta), 79A (Tc) 310W (Tc) Through Hole I2PAK (TO-262)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDI2532-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDI2532-ND
Single FETs, MOSFETs FDI2532-ND
N-Channel 150V 8A (Ta), 79A (Tc) 310W (Tc) Through Hole I2PAK (TO-262)

N-Channel 150V 8A (Ta), 79A (Tc) 310W (Tc) Through Hole I2PAK (TO-262)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDI2532 - 204098-FDI2532 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDI2532
204098-FDI2532
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDI2532 204098-FDI2532
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204098-FDI2532 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 310W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: I2PAK (TO-262) Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 8A (Ta), 79A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 107nC @ 10V Max Input Capacitance: 5870pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 16 mOhm @ 33A, 10V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204098-FDI2532
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 310W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: I2PAK (TO-262)
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 8A (Ta), 79A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 107nC @ 10V
Max Input Capacitance: 5870pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 16 mOhm @ 33A, 10V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDI2532 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDI2532
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDI2532
MOSFET N-CH 150V 8A/79A I2PAK

MOSFET N-CH 150V 8A/79A I2PAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDI2532-ND 204098-FDI2532 FDI2532
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDI2532 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-262-3 Long Leads, I2PAK, TO-262AA SOT3; I2PAK (TO-262) TO-262-3 Long Leads, I2PAK, TO-262AA
Transistor Grade / Operating Range Automotive
V(BR)DSS 150 volts
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