onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDI2532 FDI2532

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204098-FDI2532
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 310W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: I2PAK (TO-262)
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 8A (Ta), 79A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 107nC @ 10V
Max Input Capacitance: 5870pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 16 mOhm @ 33A, 10V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance

N-Channel 150V 8A (Ta), 79A (Tc) 310W (Tc) Through Hole I2PAK (TO-262)

MOSFET 150V 79A N-CH TO-262 16mR Trench Product overview: FDI2532 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 79A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 79A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDI2532 can be used for catalog matching and distributor lookup.