onsemi N-Channel 100V MOSFET Transistor FDI150N10

MOSFETs 100V N-Channel PowerTrench Product overview: FDI150N10 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDI150N10 can be used for catalog matching and distributor lookup.

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1173804-FDI150N10
Series: PowerTrench
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-262-3 Long Leads, I2Pak, TO-262AA
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Family Name: FDI150N10
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.fairchildsemi.com
Manufacturer Package: I2PAK
Channel Type Type: N
Drain Source Voltage: 100V
Vgs(th) (Maximum) @ Id: 4.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 69nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 4760pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 110W (Tc)
Rds On (Maximum) @ Id, Vgs: 16 mOhm @ 49A, 10V
Alternative Parts (Cross-Reference): STI70N10F4; AOWF412; IPI180N10N3 G;
Introduction Date: October 29, 2009
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited
Quantity per package: 800

N-Channel 100V 57A (Tc) 110W (Tc) Through Hole I2PAK (TO-262)