onsemi Single FETs, MOSFETs FDI150N10

Description
N-Channel 100V 57A (Tc) 110W (Tc) Through Hole I2PAK (TO-262)
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Description
N-Channel 100V 57A (Tc) 110W (Tc) Through Hole I2PAK (TO-262)
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single FETs, MOSFETs - FDI150N10OS-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDI150N10OS-ND
Single FETs, MOSFETs FDI150N10OS-ND
N-Channel 100V 57A (Tc) 110W (Tc) Through Hole I2PAK (TO-262)

N-Channel 100V 57A (Tc) 110W (Tc) Through Hole I2PAK (TO-262)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDI150N10 - 1173804-FDI150N10 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDI150N10
1173804-FDI150N10
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDI150N10 1173804-FDI150N10
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1173804-FDI150N10 Series: PowerTrench Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-262-3 Long Leads, I2Pak, TO-262AA Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 57A (Tc) Family Name: FDI150N10 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: I2PAK Channel Type Type: N Drain Source Voltage: 100V Vgs(th) (Maximum) @ Id: 4.5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 69nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 4760pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 110W (Tc) Rds On (Maximum) @ Id, Vgs: 16 mOhm @ 49A, 10V Alternative Parts (Cross-Reference): STI70N10F4; AOWF412; IPI180N10N3 G; Introduction Date: October 29, 2009 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2024 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Limited Quantity per package: 800

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1173804-FDI150N10
Series: PowerTrench
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-262-3 Long Leads, I2Pak, TO-262AA
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Family Name: FDI150N10
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.fairchildsemi.com
Manufacturer Package: I2PAK
Channel Type Type: N
Drain Source Voltage: 100V
Vgs(th) (Maximum) @ Id: 4.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 69nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 4760pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 110W (Tc)
Rds On (Maximum) @ Id, Vgs: 16 mOhm @ 49A, 10V
Alternative Parts (Cross-Reference): STI70N10F4; AOWF412; IPI180N10N3 G;
Introduction Date: October 29, 2009
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited
Quantity per package: 800

Buy Now Datasheet
Singapore
N-Channel 100V MOSFET Transistor
2088-FDI150N10
N-Channel 100V MOSFET Transistor 2088-FDI150N10
MOSFETs 100V N-Channel PowerTrench Product overview: FDI150N10 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDI150N10 can be used for catalog matching and distributor lookup.

MOSFETs 100V N-Channel PowerTrench Product overview: FDI150N10 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDI150N10 can be used for catalog matching and distributor lookup.

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 100V N-Channel PowerTrench

MOSFET 100V N-Channel PowerTrench

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDI150N10 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDI150N10
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDI150N10
MOSFET N-CH 100V 57A I2PAK

MOSFET N-CH 100V 57A I2PAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDI150N10OS-ND 1173804-FDI150N10 2088-FDI150N10 FDI150N10 FDI150N10
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDI150N10 N-Channel 100V MOSFET Transistor MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
Package Type TO-262-3 Long Leads, I2PAK, TO-262AA SOT3 Tube TO-262-3 Long Leads, I2PAK, TO-262AA
PD 110000 milliwatts 110 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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