onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDI030N06 FDI030N06

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038163-FDI030N06
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 231W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: I2PAK (TO-262)
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 120A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 151nC @ 10V
Max Input Capacitance: 9815pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.2 mOhm @ 75A, 10V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs

MOSFETs NCH 60V 3.0Mohm Product overview: FDI030N06 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 3.0Mohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 3.0Mohm, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDI030N06 can be used for catalog matching and distributor lookup.

N-Channel 60V 120A (Tc) 231W (Tc) Through Hole I2PAK (TO-262)