onsemi Single FETs, MOSFETs FDI025N06

N-Channel 60V 265A (Tc) 395W (Tc) Through Hole I2PAK (TO-262)

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 066963-FDI025N06
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 395W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-262-3
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 265A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 226nC @ 10V
Max Input Capacitance: 14885pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.5 mOhm @ 75A, 10V
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited

60V 265A N-CH MOSFET TO-262-3 2.5mR Product overview: FDI025N06 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 265A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 265A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDI025N06 can be used for catalog matching and distributor lookup.