MOSFETs SC70-6 COMP N-P-CH Product overview: FDG6322C from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDG6322C can be used for catalog matching and distributor lookup.
MOSFET N/P-CH 25V SC70-6
Mosfet Array N and P-Channel 25V 220mA, 410mA 300mW Surface Mount SC-88 (SC-70-6)
Mosfet Array N and P-Channel 25V 220mA, 410mA 300mW Surface Mount SC-88 (SC-70-6)
Mosfet Array N and P-Channel 25V 220mA, 410mA 300mW Surface Mount SC-88 (SC-70-6)
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015990-FDG6322C
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Family Name: FDG6322C
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-70-6
Maximum Power Dissipation: 300mW
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 220mA, 410mA
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 0.4nC @ 4.5V
Max Input Capacitance: 9.5pF @ 10V
Maximum Rds On at Id,Vgs: 4 Ohm @ 220mA, 4.5V
Alternative Parts (Cross-Reference): FDG6322C_Q; FDG6322C_D87Z;
Introduction Date: March 25, 1999
ECCN: EAR99
Country of Origin: China, Philippines
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management
Quantity per package: 3k pcs
25V 4Ω@220mA,4.5V 300mW 1.5V@250uA 1PCSN-Channel&1PCSP-
MOSFET N/P-CH 25V 0.22A SC88
DUAL N/P CHANNEL MOSFET, 25V, SC-70; Transistor Polarity:Complementa
MOSFET, FULL REEL; Transistor Polarity:Complementa
MOSFET, N & P CH, 25V, 0.22A, SC-70-6; Transistor Polarity:N and P Channel; Continuous Drain Current Id:220mA; Drain Source Voltage Vds:25V; On Resistance Rds(on):2.6ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:850mV; RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | LCSC Electronics Technology (HK) Limited | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2088-FDG6322C | FDG6322C | FDG6322CTR-ND | 015990-FDG6322C | FDG6322C | FDG6322C | FDG6322C | 58K1454 | 67R2050 |
| Product Name | MOSFET Transistor | FET, MOSFET Arrays | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDG6322C | Triode/MOS Tube/Transistor >> MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Dual N/p Channel Mosfet, 25V, Sc-70; Transistor Polarity Onsemi | Mosfet, Full Reel; Transistor Polarity Onsemi |
| Polarity | N-Channel; P-Channel | P-Channel; N and P-Channel | P-Channel | N-Channel | P-Channel | ||||
| MOSFET Operating Mode | Enhancement | ||||||||
| Transconductance | 2.00E-4 to 9.00E-4 kS | ||||||||
| PD | 300 milliwatts | 300 milliwatts | 300 milliwatts | ||||||
| Package Type | Reel | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP, SC-88, SOT-363 | SOT3; SC-70-6 | TO-3 | TO-3 |