onsemi FET, MOSFET Arrays FDG6322C

Mosfet Array N and P-Channel 25V 220mA, 410mA 300mW Surface Mount SC-88 (SC-70-6)

Mosfet Array N and P-Channel 25V 220mA, 410mA 300mW Surface Mount SC-88 (SC-70-6)

Mosfet Array N and P-Channel 25V 220mA, 410mA 300mW Surface Mount SC-88 (SC-70-6)

MOSFET N/P-CH 25V SC70-6

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015990-FDG6322C
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Family Name: FDG6322C
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-70-6
Maximum Power Dissipation: 300mW
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 220mA, 410mA
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 0.4nC @ 4.5V
Max Input Capacitance: 9.5pF @ 10V
Maximum Rds On at Id,Vgs: 4 Ohm @ 220mA, 4.5V
Alternative Parts (Cross-Reference): FDG6322C_Q; FDG6322C_D87Z;
Introduction Date: March 25, 1999
ECCN: EAR99
Country of Origin: China, Philippines
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management
Quantity per package: 3k pcs