onsemi FET, MOSFET Arrays FDG6321C

Description
MOSFET N/P-CH 25V 500/410MA SC88
Request a Quote Datasheet
Description
MOSFET N/P-CH 25V 500/410MA SC88
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - FDG6321C - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
FDG6321C
FET, MOSFET Arrays FDG6321C
MOSFET N/P-CH 25V 500/410MA SC88

MOSFET N/P-CH 25V 500/410MA SC88

Supplier's Site Datasheet
FET, MOSFET Arrays - FDG6321CTR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
FDG6321CTR-ND
FET, MOSFET Arrays FDG6321CTR-ND
Mosfet Array N and P-Channel 25V 500mA, 410mA 300mW Surface Mount SC-88 (SC-70-6)

Mosfet Array N and P-Channel 25V 500mA, 410mA 300mW Surface Mount SC-88 (SC-70-6)

Buy Now Datasheet
FET, MOSFET Arrays - FDG6321CCT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
FDG6321CCT-ND
FET, MOSFET Arrays FDG6321CCT-ND
Mosfet Array N and P-Channel 25V 500mA, 410mA 300mW Surface Mount SC-88 (SC-70-6)

Mosfet Array N and P-Channel 25V 500mA, 410mA 300mW Surface Mount SC-88 (SC-70-6)

Buy Now Datasheet
FET, MOSFET Arrays - FDG6321CDKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
FDG6321CDKR-ND
FET, MOSFET Arrays FDG6321CDKR-ND
Mosfet Array N and P-Channel 25V 500mA, 410mA 300mW Surface Mount SC-88 (SC-70-6)

Mosfet Array N and P-Channel 25V 500mA, 410mA 300mW Surface Mount SC-88 (SC-70-6)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDG6321C - 015989-FDG6321C - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDG6321C
015989-FDG6321C
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDG6321C 015989-FDG6321C
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 015989-FDG6321C Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Family Name: FDG6321C Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-70-6 Maximum Power Dissipation: 300mW Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 500mA, 410mA Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 2.3nC @ 4.5V Max Input Capacitance: 50pF @ 10V Maximum Rds On at Id,Vgs: 450 mOhm @ 500mA, 4.5V Alternative Parts (Cross-Reference): FDG6321C_Q; FDG6321C_NF40; Introduction Date: December 02, 1998 ECCN: EAR99 Country of Origin: China, Philippines Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015989-FDG6321C
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Family Name: FDG6321C
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-70-6
Maximum Power Dissipation: 300mW
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 500mA, 410mA
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 2.3nC @ 4.5V
Max Input Capacitance: 50pF @ 10V
Maximum Rds On at Id,Vgs: 450 mOhm @ 500mA, 4.5V
Alternative Parts (Cross-Reference): FDG6321C_Q; FDG6321C_NF40;
Introduction Date: December 02, 1998
ECCN: EAR99
Country of Origin: China, Philippines
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs

Buy Now Datasheet
Dual N/p Channel Mosfet, 25V, Sc-70; Transistor Polarity Onsemi - 38C7127 - Newark, An Avnet Company
Chicago, IL, United States
Dual N/p Channel Mosfet, 25V, Sc-70; Transistor Polarity Onsemi
38C7127
Dual N/p Channel Mosfet, 25V, Sc-70; Transistor Polarity Onsemi 38C7127
DUAL N/P CHANNEL MOSFET, 25V, SC-70; Transistor Polarity:Complementa ry N and P Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:500mA; On Resistance Rds(on):0.45ohm; Transistor Mounting:Surface Mount RoHS Compliant: Yes

DUAL N/P CHANNEL MOSFET, 25V, SC-70; Transistor Polarity:Complementary N and P Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:500mA; On Resistance Rds(on):0.45ohm; Transistor Mounting:Surface Mount RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
FDG6321C
MOSFET FDG6321C
MOSFET SC70-6 COMP N-P-CH

MOSFET SC70-6 COMP N-P-CH

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDG6321C - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDG6321C
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDG6321C
MOSFET N/P-CH 25V 0.5A SC88

MOSFET N/P-CH 25V 0.5A SC88

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDG6321C FDG6321CTR-ND 015989-FDG6321C 38C7127 FDG6321C FDG6321C
Product Name FET, MOSFET Arrays FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDG6321C Dual N/p Channel Mosfet, 25V, Sc-70; Transistor Polarity Onsemi MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; N and P-Channel P-Channel P-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 25 volts 25 volts
IDSS 500 milliamps 500 milliamps
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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