onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDG6316P FDG6316P

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 094822-FDG6316P Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Family Name: FDG6316P Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-70-6 Maximum Power Dissipation: 300mW Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 700mA Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 2.4nC @ 4.5V Max Input Capacitance: 146pF @ 6V Maximum Rds On at Id,Vgs: 270 mOhm @ 700mA, 4.5V Alternative Parts (Cross-Reference): Si1965DH-T1-E3; Si1965DH; Si1965DH-T1-GE3; Introduction Date: December 20, 2001 ECCN: EAR99 Country of Origin: China, Philippines Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDG6316P - 094822-FDG6316P - Win Source Electronics
    Win Source Electronics
  • FET, MOSFET Arrays - FDG6316P - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • FET, MOSFET Arrays - FDG6316PTR-ND - DigiKey
    DigiKey
  • FET, MOSFET Arrays - FDG6316PDKR-ND - DigiKey
    DigiKey
  • FET, MOSFET Arrays - FDG6316PCT-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDG6316P - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Dual P Channel Mosfet, -12V, Sc-70; Transistor Polarity Onsemi - 58K1452 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Dual Mosfet, Dual P Channel, 700 Ma, -12 V, 0.221 Ohm, -4.5 V, -600 Mv Rohs Compliant Onsemi - 47T5027 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Mosfet, Full Reel; Transistor Polarity Onsemi - 67R2049 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 094822-FDG6316P Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Family Name: FDG6316P Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-70-6 Maximum Power Dissipation: 300mW Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 700mA Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 2.4nC @ 4.5V Max Input Capacitance: 146pF @ 6V Maximum Rds On at Id,Vgs: 270 mOhm @ 700mA, 4.5V Alternative Parts (Cross-Reference): Si1965DH-T1-E3; Si1965DH; Si1965DH-T1-GE3; Introduction Date: December 20, 2001 ECCN: EAR99 Country of Origin: China, Philippines Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDG6316P - 094822-FDG6316P - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDG6316P
094822-FDG6316P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDG6316P 094822-FDG6316P
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 094822-FDG6316P Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Family Name: FDG6316P Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-70-6 Maximum Power Dissipation: 300mW Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 700mA Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 2.4nC @ 4.5V Max Input Capacitance: 146pF @ 6V Maximum Rds On at Id,Vgs: 270 mOhm @ 700mA, 4.5V Alternative Parts (Cross-Reference): Si1965DH-T1-E3; Si1965DH; Si1965DH-T1-GE3; Introduction Date: December 20, 2001 ECCN: EAR99 Country of Origin: China, Philippines Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 094822-FDG6316P
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: FDG6316P
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-70-6
Maximum Power Dissipation: 300mW
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 700mA
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 2.4nC @ 4.5V
Max Input Capacitance: 146pF @ 6V
Maximum Rds On at Id,Vgs: 270 mOhm @ 700mA, 4.5V
Alternative Parts (Cross-Reference): Si1965DH-T1-E3; Si1965DH; Si1965DH-T1-GE3;
Introduction Date: December 20, 2001
ECCN: EAR99
Country of Origin: China, Philippines
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs

Buy Now Datasheet
FET, MOSFET Arrays - FDG6316P - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
FDG6316P
FET, MOSFET Arrays FDG6316P
MOSFET 2P-CH 12V 0.7A SC70-6

MOSFET 2P-CH 12V 0.7A SC70-6

Supplier's Site Datasheet
FET, MOSFET Arrays - FDG6316PTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
FDG6316PTR-ND
FET, MOSFET Arrays FDG6316PTR-ND
Mosfet Array 2 P-Channel (Dual) 12V 700mA 300mW Surface Mount SC-88 (SC-70-6)

Mosfet Array 2 P-Channel (Dual) 12V 700mA 300mW Surface Mount SC-88 (SC-70-6)

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FET, MOSFET Arrays - FDG6316PDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
FDG6316PDKR-ND
FET, MOSFET Arrays FDG6316PDKR-ND
Mosfet Array 2 P-Channel (Dual) 12V 700mA 300mW Surface Mount SC-88 (SC-70-6)

Mosfet Array 2 P-Channel (Dual) 12V 700mA 300mW Surface Mount SC-88 (SC-70-6)

Buy Now Datasheet
FET, MOSFET Arrays - FDG6316PCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
FDG6316PCT-ND
FET, MOSFET Arrays FDG6316PCT-ND
Mosfet Array 2 P-Channel (Dual) 12V 700mA 300mW Surface Mount SC-88 (SC-70-6)

Mosfet Array 2 P-Channel (Dual) 12V 700mA 300mW Surface Mount SC-88 (SC-70-6)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDG6316P - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDG6316P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDG6316P
MOSFET 2P-CH 12V 0.7A SC88

MOSFET 2P-CH 12V 0.7A SC88

Supplier's Site
Dual P Channel Mosfet, -12V, Sc-70; Transistor Polarity Onsemi - 58K1452 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Dual P Channel Mosfet, -12V, Sc-70; Transistor Polarity Onsemi
58K1452
Dual P Channel Mosfet, -12V, Sc-70; Transistor Polarity Onsemi 58K1452
DUAL P CHANNEL MOSFET, -12V, SC-70; Transistor Polarity:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:700mA; On Resistance Rds(on):0.221ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V RoHS Compliant: Yes

DUAL P CHANNEL MOSFET, -12V, SC-70; Transistor Polarity:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:700mA; On Resistance Rds(on):0.221ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V RoHS Compliant: Yes

Supplier's Site Datasheet
Dual Mosfet, Dual P Channel, 700 Ma, -12 V, 0.221 Ohm, -4.5 V, -600 Mv Rohs Compliant Onsemi - 47T5027 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Dual Mosfet, Dual P Channel, 700 Ma, -12 V, 0.221 Ohm, -4.5 V, -600 Mv Rohs Compliant Onsemi
47T5027
Dual Mosfet, Dual P Channel, 700 Ma, -12 V, 0.221 Ohm, -4.5 V, -600 Mv Rohs Compliant Onsemi 47T5027
Dual MOSFET, Dual P Channel, 700 mA, -12 V, 0.221 ohm, -4.5 V, -600 mV RoHS Compliant: Yes

Dual MOSFET, Dual P Channel, 700 mA, -12 V, 0.221 ohm, -4.5 V, -600 mV RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, Full Reel; Transistor Polarity Onsemi - 67R2049 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Full Reel; Transistor Polarity Onsemi
67R2049
Mosfet, Full Reel; Transistor Polarity Onsemi 67R2049
MOSFET, FULL REEL; Transistor Polarity:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:700mA; On Resistance Rds(on):0.221ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; No. of Pins:6Pins RoHS Compliant: Yes

MOSFET, FULL REEL; Transistor Polarity:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:700mA; On Resistance Rds(on):0.221ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; No. of Pins:6Pins RoHS Compliant: Yes

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FDG6316P
MOSFET FDG6316P
MOSFET P-Ch PowerTrench Specified 1.8V

MOSFET P-Ch PowerTrench Specified 1.8V

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Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Newark, An Avnet Company Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 094822-FDG6316P FDG6316P FDG6316PTR-ND FDG6316P 58K1452 47T5027 67R2049 FDG6316P
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDG6316P FET, MOSFET Arrays FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs Dual P Channel Mosfet, -12V, Sc-70; Transistor Polarity Onsemi Dual Mosfet, Dual P Channel, 700 Ma, -12 V, 0.221 Ohm, -4.5 V, -600 Mv Rohs Compliant Onsemi Mosfet, Full Reel; Transistor Polarity Onsemi MOSFET
Polarity P-Channel P-Channel; 2 P-Channel (Dual) P-Channel P-Channel
V(BR)DSS 12 volts 12 volts
PD 300 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; SC-70-6 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 TO-3 TO-3 TO-3
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