P-Channel MOSFET, Dual, -12V, 700mA, 270mR, SC, Tape & Reel Product overview: FDG6316P from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, Dual, -12V, 700mA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, -12V, 700mA, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-FDG6316P can be used for catalog matching and distributor lookup.
Mosfet Array 2 P-Channel (Dual) 12V 700mA 300mW Surface Mount SC-88 (SC-70-6)
Mosfet Array 2 P-Channel (Dual) 12V 700mA 300mW Surface Mount SC-88 (SC-70-6)
Mosfet Array 2 P-Channel (Dual) 12V 700mA 300mW Surface Mount SC-88 (SC-70-6)
MOSFET 2P-CH 12V 0.7A SC70-6
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 094822-FDG6316P
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: FDG6316P
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-70-6
Maximum Power Dissipation: 300mW
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 700mA
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 2.4nC @ 4.5V
Max Input Capacitance: 146pF @ 6V
Maximum Rds On at Id,Vgs: 270 mOhm @ 700mA, 4.5V
Alternative Parts (Cross-Reference): Si1965DH-T1-E3; Si1965DH; Si1965DH-T1-GE3;
Introduction Date: December 20, 2001
ECCN: EAR99
Country of Origin: China, Philippines
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs
MOSFET P-Ch PowerTrench Specified 1.8V
MOSFET 2P-CH 12V 0.7A SC88
DUAL P CHANNEL MOSFET, -12V, SC-70; Transistor Polarity:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:700mA; On Resistance Rds(on):0.221ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V RoHS Compliant: Yes
Dual MOSFET, Dual P Channel, 700 mA, -12 V, 0.221 ohm, -4.5 V, -600 mV RoHS Compliant: Yes
MOSFET, FULL REEL; Transistor Polarity:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:700mA; On Resistance Rds(on):0.221ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; No. of Pins:6Pins RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 289-FDG6316P | FDG6316PTR-ND | FDG6316P | 094822-FDG6316P | FDG6316P | FDG6316P | 58K1452 | 47T5027 | 67R2049 |
| Product Name | P-Channel Dual -12V 700mA MOSFET Transistor | FET, MOSFET Arrays | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDG6316P | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Dual P Channel Mosfet, -12V, Sc-70; Transistor Polarity Onsemi | Dual Mosfet, Dual P Channel, 700 Ma, -12 V, 0.221 Ohm, -4.5 V, -600 Mv Rohs Compliant Onsemi | Mosfet, Full Reel; Transistor Polarity Onsemi |
| Polarity | P-Channel | P-Channel; 2 P-Channel (Dual) | P-Channel | P-Channel | P-Channel | ||||
| PD | 300 milliwatts | 300 milliwatts | |||||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||
| Package Type | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP, SC-88, SOT-363 | SOT3; SC-70-6 | TO-3 | TO-3 | TO-3 | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
