Mosfet Array 2 P-Channel (Dual) 12V 700mA 300mW Surface Mount SC-88 (SC-70-6)
Mosfet Array 2 P-Channel (Dual) 12V 700mA 300mW Surface Mount SC-88 (SC-70-6)
Mosfet Array 2 P-Channel (Dual) 12V 700mA 300mW Surface Mount SC-88 (SC-70-6)
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 094822-FDG6316P
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: FDG6316P
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-70-6
Maximum Power Dissipation: 300mW
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 700mA
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 2.4nC @ 4.5V
Max Input Capacitance: 146pF @ 6V
Maximum Rds On at Id,Vgs: 270 mOhm @ 700mA, 4.5V
Alternative Parts (Cross-Reference): Si1965DH-T1-E3; Si1965DH; Si1965DH-T1-GE3;
Introduction Date: December 20, 2001
ECCN: EAR99
Country of Origin: China, Philippines
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs
MOSFET 2P-CH 12V 0.7A SC70-6
MOSFET P-Ch PowerTrench Specified 1.8V
MOSFET 2P-CH 12V 0.7A SC88
DUAL P CHANNEL MOSFET, -12V, SC-70; Transistor Polarity:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:700mA; On Resistance Rds(on):0.221ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V RoHS Compliant: Yes
Dual MOSFET, Dual P Channel, 700 mA, -12 V, 0.221 ohm, -4.5 V, -600 mV RoHS Compliant: Yes
MOSFET, FULL REEL; Transistor Polarity:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:700mA; On Resistance Rds(on):0.221ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; No. of Pins:6Pins RoHS Compliant: Yes
| DigiKey | Win Source Electronics | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDG6316PTR-ND | 094822-FDG6316P | FDG6316P | FDG6316P | FDG6316P | 58K1452 | 47T5027 | 67R2049 |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDG6316P | FET, MOSFET Arrays | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Dual P Channel Mosfet, -12V, Sc-70; Transistor Polarity Onsemi | Dual Mosfet, Dual P Channel, 700 Ma, -12 V, 0.221 Ohm, -4.5 V, -600 Mv Rohs Compliant Onsemi | Mosfet, Full Reel; Transistor Polarity Onsemi |
| Package Type | 6-TSSOP, SC-88, SOT-363 | SOT3; SC-70-6 | 6-TSSOP, SC-88, SOT-363 | TO-3 | TO-3 | TO-3 | ||
| Polarity | P-Channel | P-Channel; 2 P-Channel (Dual) | P-Channel | P-Channel | ||||
| V(BR)DSS | 12 volts | 12 volts | ||||||
| PD | 300 milliwatts | |||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
