MOSFET 2P-CH 20V 600MA SC88
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015987-FDG6308P
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: FDG6308P
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-70-6
Maximum Power Dissipation: 300mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 600mA
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 2.5nC @ 4.5V
Max Input Capacitance: 153pF @ 10V
Maximum Rds On at Id,Vgs: 400 mOhm @ 600mA, 4.5V
Alternative Parts (Cross-Reference): AO7801; CMKDM8005; PJT7801_R1_00001; PJT7801_R2_00001;
Introduction Date: November 03, 2000
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs
Dual P-Channel JFET -20V, -600mA, 400mR, SC Package Product overview: FDG6308P from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, Dual, -20V, -600mA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, -20V, -600mA, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-FDG6308P can be used for catalog matching and distributor lookup.
Mosfet Array 2 P-Channel (Dual) 20V 600mA 300mW Surface Mount SC-88 (SC-70-6)
MOSFET Dual P-Ch 1.8V Spec Power Trench
MOSFET 2P-CH 20V 600MA SC88
MOSFET, DUAL P-CH, -20V, -0.6A, SC-70; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-600mA; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.27ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage RoHS Compliant: Yes
| ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDG6308P | 015987-FDG6308P | 289-FDG6308P | FDG6308PTR-ND | FDG6308P | FDG6308P | 07AH3908 |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDG6308P | P-Channel Dual -20V -600mA MOSFET Transistor | FET, MOSFET Arrays | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Dual P-Ch, -20V, -0.6A, Sc-70; Transistor Polarity Onsemi |
| Polarity | P-Channel; 2 P-Channel (Dual) | P-Channel | P-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 20 volts | 20 volts | |||||
| IDSS | 600 milliamps | -600 milliamps | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) |
