Mosfet Array 2 P-Channel (Dual) 20V 600mA 300mW Surface Mount SC-88 (SC-70-6)
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015986-FDG6306P
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: FDG6306P
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-70-6
Maximum Power Dissipation: 300mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 600mA
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 2nC @ 4.5V
Max Input Capacitance: 114pF @ 10V
Maximum Rds On at Id,Vgs: 420 mOhm @ 600mA, 4.5V
Alternative Parts (Cross-Reference): AO7801; Si1967DH-T1-E3; Si1967DH-T1-GE3;
Introduction Date: February 09, 2001
ECCN: EAR99
Country of Origin: China, Philippines
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Sufficient
Quantity per package: 3k pcs
P-Channel Dual JFET, -20V, -600mA, 420mR, SC Package Product overview: FDG6306P from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, Dual, -20V, -600mA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, -20V, -600mA, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-FDG6306P can be used for catalog matching and distributor lookup.
MOSFET 2P-CH 20V 600MA SC88
P CHANNEL MOSFET, -20V, 600mA; Transistor Polarity:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:600mA; On Resistance Rds(on):0.3ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V RoHS Compliant: Yes
P CHANNEL MOSFET, -20V, 600mA, FULL REEL; Transistor Polarity:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:600mA; On Resistance Rds(on):0.3ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V RoHS Compliant: Yes
MOSFET 2P-CH 20V 600MA SC88
MOSFET P-Ch PowerTrench Specified 2.5V
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDG6306PTR-ND | 015986-FDG6306P | 289-FDG6306P | FDG6306P | 15R3425 | FDG6306P | FDG6306P |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDG6306P | P-Channel Dual -20V -600mA MOSFET Transistor | FET, MOSFET Arrays | P Channel Mosfet, -20V, 600Ma; Transistor Polarity Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Package Type | 6-TSSOP, SC-88, SOT-363 | SOT3; SC-70-6 | 6-TSSOP, SC-88, SOT-363 | TO-3 | |||
| Polarity | P-Channel | P-Channel | P-Channel; 2 P-Channel (Dual) | P-Channel | |||
| V(BR)DSS | 20 volts | 20 volts | |||||
| PD | 300 milliwatts | 300 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
