MOSFET 2P-CH 25V 0.41A SC70-6
MOSFETs SC70-6 P-CH -25V Product overview: FDG6304P from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -25V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -25V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDG6304P can be used for catalog matching and distributor lookup.
Mosfet Array 2 P-Channel (Dual) 25V 410mA 300mW Surface Mount SC-88 (SC-70-6)
Mosfet Array 2 P-Channel (Dual) 25V 410mA 300mW Surface Mount SC-88 (SC-70-6)
Mosfet Array 2 P-Channel (Dual) 25V 410mA 300mW Surface Mount SC-88 (SC-70-6)
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015985-FDG6304P
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: FDG6304P
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-70-6
Maximum Power Dissipation: 300mW
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 410mA
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 1.5nC @ 4.5V
Max Input Capacitance: 62pF @ 10V
Maximum Rds On at Id,Vgs: 1.1 Ohm @ 410mA, 4.5V
Alternative Parts (Cross-Reference): FDG6304P_D87Z;
Introduction Date: August 06, 1999
ECCN: EAR99
Country of Origin: China, Philippines
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Limited
Quantity per package: 3k pcs
MOSFET 2P-CH 25V 0.41A SC88
Dual MOSFET, Dual P Channel, -410 mA, -25 V, 0.85 ohm, -4.5 V, -820 mV RoHS Compliant: Yes
MOSFET, FULL REEL; Transistor Polarity:P Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:410mA; On Resistance Rds(on):0.85ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; No. of Pins:6Pins RoHS Compliant: Yes
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Bipolar RF Transistors | Bipolar RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDG6304P | 2088-FDG6304P | FDG6304PCT-ND | 015985-FDG6304P | 1867152 | 1869016P | FDG6304P | 31Y1370 | 67R2048 | FDG6304P |
| Product Name | FET, MOSFET Arrays | -25V MOSFET Transistor | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDG6304P | Bipolar Transistors | Bipolar Transistors | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Dual Mosfet, Dual P Channel, -410 Ma, -25 V, 0.85 Ohm, -4.5 V, -820 Mv Rohs Compliant Onsemi | Mosfet, Full Reel; Transistor Polarity Onsemi | MOSFET |
| Polarity | P-Channel; 2 P-Channel (Dual) | P-Channel | P-Channel | P-Channel | ||||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||||
| V(BR)DSS | 25 volts | 25 volts | ||||||||
| IDSS | 410 milliamps | 410 milliamps | ||||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | 150 C (302 F) |
