Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015983-FDG6301N
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: FDG6301N
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-70-6
Maximum Power Dissipation: 300mW
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 220mA
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 0.4nC @ 4.5V
Max Input Capacitance: 9.5pF @ 10V
Maximum Rds On at Id,Vgs: 4 Ohm @ 220mA, 4.5V
Alternative Parts (Cross-Reference): FDG6301N_F085; DMG6301UDW-7; DMG6301UDW-13;
Introduction Date: August 06, 1999
ECCN: EAR99
Country of Origin: China, Philippines
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management
Quantity per package: 3k pcs
Mosfet Array 2 N-Channel (Dual) 25V 220mA 300mW Surface Mount SC-88 (SC-70-6)
Mosfet Array 2 N-Channel (Dual) 25V 220mA 300mW Surface Mount SC-88 (SC-70-6)
Mosfet Array 2 N-Channel (Dual) 25V 220mA 300mW Surface Mount SC-88 (SC-70-6)
MOSFET 2N-CH 25V 0.22A SC70-6
Dual MOSFET, Dual N Channel, 220 mA, 25 V, 4 ohm, 4.5 V, 850 mV RoHS Compliant: Yes
MOSFET, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:220mA; On Resistance Rds(on):4ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Power Dissipation Pd:300mW RoHS Compliant: Yes
MOSFET 2N-CH 25V 0.22A SC88
25V 220mA 4Ω@220mA,4.5V 300mW 1.5V@250uA 2 N-Channel SC-70-6 MOSFETs ROHS
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 015983-FDG6301N | FDG6301NTR-ND | FDG6301N | 61M6246 | 67R2047 | FDG6301N | FDG6301N | FDG6301N |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDG6301N | FET, MOSFET Arrays | FET, MOSFET Arrays | Dual Mosfet, Dual N Channel, 220 Ma, 25 V, 4 Ohm, 4.5 V, 850 Mv Rohs Compliant Onsemi | Mosfet, Full Reel; Transistor Polarity Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Triode/MOS Tube/Transistor >> MOSFETs |
| Polarity | N-Channel | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | ||||
| V(BR)DSS | 25 volts | 25 volts | 25 volts | |||||
| PD | 300 milliwatts | 300 milliwatts | 300 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | SOT3; SC-70-6 | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP, SC-88, SOT-363 | TO-3 | TO-3 |
