onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDG6301N_F085 FDG6301N_F085

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038143-FDG6301N_F08 5 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-70-6 Maximum Power Dissipation: 300mW Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 220mA Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 0.4nC @ 4.5V Max Input Capacitance: 9.5pF @ 10V Maximum Rds On at Id,Vgs: 4 Ohm @ 220mA, 4.5V Alternative Parts (Cross-Reference): FDG6301N; DMG6301UDW-7; DMG6301UDW-13; Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038143-FDG6301N_F08 5 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-70-6 Maximum Power Dissipation: 300mW Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 220mA Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 0.4nC @ 4.5V Max Input Capacitance: 9.5pF @ 10V Maximum Rds On at Id,Vgs: 4 Ohm @ 220mA, 4.5V Alternative Parts (Cross-Reference): FDG6301N; DMG6301UDW-7; DMG6301UDW-13; Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDG6301N_F085 - 1038143-FDG6301N_F085 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDG6301N_F085
1038143-FDG6301N_F085
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDG6301N_F085 1038143-FDG6301N_F085
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038143-FDG6301N_F08 5 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-70-6 Maximum Power Dissipation: 300mW Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 220mA Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 0.4nC @ 4.5V Max Input Capacitance: 9.5pF @ 10V Maximum Rds On at Id,Vgs: 4 Ohm @ 220mA, 4.5V Alternative Parts (Cross-Reference): FDG6301N; DMG6301UDW-7; DMG6301UDW-13; Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038143-FDG6301N_F085
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-70-6
Maximum Power Dissipation: 300mW
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 220mA
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 0.4nC @ 4.5V
Max Input Capacitance: 9.5pF @ 10V
Maximum Rds On at Id,Vgs: 4 Ohm @ 220mA, 4.5V
Alternative Parts (Cross-Reference): FDG6301N; DMG6301UDW-7; DMG6301UDW-13;
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1038143-FDG6301N_F085
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDG6301N_F085
Polarity N-Channel
V(BR)DSS 25 volts
PD 300 milliwatts
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