onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDG410NZ FDG410NZ

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038141-FDG410NZ Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 420mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-70-6 Dimension: 6-TSSOP, SC-88, SOT-363 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 2.2A (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 7.2nC @ 4.5V Max Input Capacitance: 535pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 70 mOhm @ 2.2A, 4.5V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038141-FDG410NZ Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 420mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-70-6 Dimension: 6-TSSOP, SC-88, SOT-363 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 2.2A (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 7.2nC @ 4.5V Max Input Capacitance: 535pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 70 mOhm @ 2.2A, 4.5V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDG410NZ - 1038141-FDG410NZ - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDG410NZ
1038141-FDG410NZ
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDG410NZ 1038141-FDG410NZ
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038141-FDG410NZ Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 420mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-70-6 Dimension: 6-TSSOP, SC-88, SOT-363 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 2.2A (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 7.2nC @ 4.5V Max Input Capacitance: 535pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 70 mOhm @ 2.2A, 4.5V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038141-FDG410NZ
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 420mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-70-6
Dimension: 6-TSSOP, SC-88, SOT-363
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 2.2A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 7.2nC @ 4.5V
Max Input Capacitance: 535pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 70 mOhm @ 2.2A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDG410NZ - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDG410NZ
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDG410NZ
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Supplier's Site
Sheung Wan, Hong Kong
MOSFET
FDG410NZ
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MOSFET 20V Single NChannel PowerTrench MOSFET

Buy Now Datasheet

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1038141-FDG410NZ FDG410NZ FDG410NZ
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDG410NZ Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel
V(BR)DSS 20 volts
PD 420 milliwatts
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