Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038140-FDG332PZ
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 750mW (Ta)
Family Name: FDG332PZ
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-70-6
Dimension: 6-TSSOP, SC-88, SOT-363
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 2.6A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 10.8nC @ 4.5V
Max Input Capacitance: 560pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 95 mOhm @ 2.6A, 4.5V
Alternative Parts (Cross-Reference): Si1413DH-E3; Si1413DH-T1; Si1413DH-T1-GE3; Si1413DH;
Introduction Date: July 01, 2007
ECCN: EAR99
Country of Origin: Philippines
Estimated EOL Date: 2021
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Limited
Quantity per package: 3k pcs
MOSFET P-CH 20V 2.6A SC88
MOSFET -20V P-Channel PowerTrench
MOSFET P-CH 20V 2.6A SC88
MOSFET, P-CH, -20V, -2.6A, SC-70-6; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:700mV RoHS Compliant: Yes
| Win Source Electronics | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1038140-FDG332PZ | FDG332PZ | FDG332PZ | FDG332PZ | 31Y1369 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDG332PZ | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P-Ch, -20V, -2.6A, Sc-70-6; Channel Type Onsemi |
| Polarity | P-Channel; P-Channel | P-Channel; P-Channel | |||
| V(BR)DSS | 20 volts | 20 volts | |||
| PD | 750 milliwatts | 750 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
