onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDG332PZ FDG332PZ

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038140-FDG332PZ Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 750mW (Ta) Family Name: FDG332PZ Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-70-6 Dimension: 6-TSSOP, SC-88, SOT-363 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 2.6A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 10.8nC @ 4.5V Max Input Capacitance: 560pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 95 mOhm @ 2.6A, 4.5V Alternative Parts (Cross-Reference): Si1413DH-E3; Si1413DH-T1; Si1413DH-T1-GE3; Si1413DH; Introduction Date: July 01, 2007 ECCN: EAR99 Country of Origin: Philippines Estimated EOL Date: 2021 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Limited Quantity per package: 3k pcs
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDG332PZ - 1038140-FDG332PZ - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FDG332PZ - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Mosfet, P-Ch, -20V, -2.6A, Sc-70-6; Channel Type Onsemi - 31Y1369 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDG332PZ - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038140-FDG332PZ Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 750mW (Ta) Family Name: FDG332PZ Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-70-6 Dimension: 6-TSSOP, SC-88, SOT-363 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 2.6A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 10.8nC @ 4.5V Max Input Capacitance: 560pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 95 mOhm @ 2.6A, 4.5V Alternative Parts (Cross-Reference): Si1413DH-E3; Si1413DH-T1; Si1413DH-T1-GE3; Si1413DH; Introduction Date: July 01, 2007 ECCN: EAR99 Country of Origin: Philippines Estimated EOL Date: 2021 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Limited Quantity per package: 3k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDG332PZ - 1038140-FDG332PZ - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDG332PZ
1038140-FDG332PZ
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDG332PZ 1038140-FDG332PZ
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038140-FDG332PZ Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 750mW (Ta) Family Name: FDG332PZ Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-70-6 Dimension: 6-TSSOP, SC-88, SOT-363 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 2.6A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 10.8nC @ 4.5V Max Input Capacitance: 560pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 95 mOhm @ 2.6A, 4.5V Alternative Parts (Cross-Reference): Si1413DH-E3; Si1413DH-T1; Si1413DH-T1-GE3; Si1413DH; Introduction Date: July 01, 2007 ECCN: EAR99 Country of Origin: Philippines Estimated EOL Date: 2021 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Limited Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038140-FDG332PZ
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 750mW (Ta)
Family Name: FDG332PZ
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-70-6
Dimension: 6-TSSOP, SC-88, SOT-363
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 2.6A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 10.8nC @ 4.5V
Max Input Capacitance: 560pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 95 mOhm @ 2.6A, 4.5V
Alternative Parts (Cross-Reference): Si1413DH-E3; Si1413DH-T1; Si1413DH-T1-GE3; Si1413DH;
Introduction Date: July 01, 2007
ECCN: EAR99
Country of Origin: Philippines
Estimated EOL Date: 2021
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Limited
Quantity per package: 3k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FDG332PZ - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDG332PZ
Single FETs, MOSFETs FDG332PZ
MOSFET P-CH 20V 2.6A SC88

MOSFET P-CH 20V 2.6A SC88

Supplier's Site Datasheet
Mosfet, P-Ch, -20V, -2.6A, Sc-70-6; Channel Type Onsemi - 31Y1369 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, -20V, -2.6A, Sc-70-6; Channel Type Onsemi
31Y1369
Mosfet, P-Ch, -20V, -2.6A, Sc-70-6; Channel Type Onsemi 31Y1369
MOSFET, P-CH, -20V, -2.6A, SC-70-6; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:700mV RoHS Compliant: Yes

MOSFET, P-CH, -20V, -2.6A, SC-70-6; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:700mV RoHS Compliant: Yes

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FDG332PZ
MOSFET FDG332PZ
MOSFET -20V P-Channel PowerTrench

MOSFET -20V P-Channel PowerTrench

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDG332PZ - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDG332PZ
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDG332PZ
MOSFET P-CH 20V 2.6A SC88

MOSFET P-CH 20V 2.6A SC88

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1038140-FDG332PZ FDG332PZ 31Y1369 FDG332PZ FDG332PZ
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDG332PZ Single FETs, MOSFETs Mosfet, P-Ch, -20V, -2.6A, Sc-70-6; Channel Type Onsemi MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel; P-Channel
V(BR)DSS 20 volts 20 volts
PD 750 milliwatts 750 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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