onsemi Single FETs, MOSFETs FDG327N

Description
N-Channel 20V 1.5A (Ta) 420mW (Ta) Surface Mount SC-88 (SC-70-6)
Request a Quote Datasheet
Description
N-Channel 20V 1.5A (Ta) 420mW (Ta) Surface Mount SC-88 (SC-70-6)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDG327NTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDG327NTR-ND
Single FETs, MOSFETs FDG327NTR-ND
N-Channel 20V 1.5A (Ta) 420mW (Ta) Surface Mount SC-88 (SC-70-6)

N-Channel 20V 1.5A (Ta) 420mW (Ta) Surface Mount SC-88 (SC-70-6)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDG327N - 015980-FDG327N - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDG327N
015980-FDG327N
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDG327N 015980-FDG327N
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 015980-FDG327N Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 420mW (Ta) Family Name: FDG327N Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-70-6 Dimension: 6-TSSOP, SC-88, SOT-363 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 1.5A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 6nC @ 4.5V Max Input Capacitance: 412pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 90 mOhm @ 1.5A, 4.5V Alternative Parts (Cross-Reference): Si1406DH; Si1406DH-T1-E3; Si1406DH-T1; Introduction Date: October 02, 2001 ECCN: EAR99 Country of Origin: China, Philippines Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited Application Field: Used in Power Management, Industrial Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015980-FDG327N
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 420mW (Ta)
Family Name: FDG327N
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-70-6
Dimension: 6-TSSOP, SC-88, SOT-363
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 1.5A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 6nC @ 4.5V
Max Input Capacitance: 412pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 90 mOhm @ 1.5A, 4.5V
Alternative Parts (Cross-Reference): Si1406DH; Si1406DH-T1-E3; Si1406DH-T1;
Introduction Date: October 02, 2001
ECCN: EAR99
Country of Origin: China, Philippines
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management, Industrial
Quantity per package: 3k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FDG327N - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDG327N
Single FETs, MOSFETs FDG327N
MOSFET N-CH 20V 1.5A SC88

MOSFET N-CH 20V 1.5A SC88

Supplier's Site Datasheet
Mosfet Transistor, N Channel, 1.5 A, 20 V, 0.057 Ohm, 4.5 V, 700 Mv Rohs Compliant Onsemi - 31Y1367 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 1.5 A, 20 V, 0.057 Ohm, 4.5 V, 700 Mv Rohs Compliant Onsemi
31Y1367
Mosfet Transistor, N Channel, 1.5 A, 20 V, 0.057 Ohm, 4.5 V, 700 Mv Rohs Compliant Onsemi 31Y1367
MOSFET Transistor, N Channel, 1.5 A, 20 V, 0.057 ohm, 4.5 V, 700 mV RoHS Compliant: Yes

MOSFET Transistor, N Channel, 1.5 A, 20 V, 0.057 ohm, 4.5 V, 700 mV RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDG327N - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDG327N
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDG327N
MOSFET N-CH 20V 1.5A SC88

MOSFET N-CH 20V 1.5A SC88

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDG327NTR-ND 015980-FDG327N FDG327N 31Y1367 FDG327N
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDG327N Single FETs, MOSFETs Mosfet Transistor, N Channel, 1.5 A, 20 V, 0.057 Ohm, 4.5 V, 700 Mv Rohs Compliant Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel N-Channel
Package Type 6-TSSOP, SC-88, SOT-363 SOT3; SC-70-6 6-TSSOP, SC-88, SOT-363 TO-3 6-TSSOP, SC-88, SOT-363
V(BR)DSS 20 volts 20 volts
PD 420 milliwatts 420 milliwatts
Unlock Full Specs
to access all available technical data

Similar Products

Single FETs, MOSFETs - AUIRFS4127TRL - ODG (Origin Data Global)
Specs
Polarity N-Channel; N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 200 volts
View Details
5 suppliers
GaAs Fet Switches - KS209 - Micross Components, Inc.
Micross Components, Inc.
Specs
Operating Frequency 20 to 3000 MHz
View Details
DC - 20 GHz, 250 um Discrete GaAs pHEMT Die - QPD2025D - Qorvo
Specs
Transistor Type PHEMT
Transistor Technology / Material DC - 20 GHz, 250 um Discrete GaAs pHEMT Die
Transistor Grade / Operating Range Military
View Details
2 suppliers