Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015980-FDG327N
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 420mW (Ta)
Family Name: FDG327N
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-70-6
Dimension: 6-TSSOP, SC-88, SOT-363
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 1.5A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 6nC @ 4.5V
Max Input Capacitance: 412pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 90 mOhm @ 1.5A, 4.5V
Alternative Parts (Cross-Reference): Si1406DH; Si1406DH-T1-E3; Si1406DH-T1;
Introduction Date: October 02, 2001
ECCN: EAR99
Country of Origin: China, Philippines
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management, Industrial
Quantity per package: 3k pcs
N-Channel 20V 1.5A (Ta) 420mW (Ta) Surface Mount SC-88 (SC-70-6)
N-Ch MOSFET, 20V, 1.5A, 90mR, SC, Surface Mount Product overview: FDG327N from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 20V, 1.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 20V, 1.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDG327N can be used for catalog matching and distributor lookup.
MOSFET N-CH 20V 1.5A SC88
MOSFET N-CH 20V 1.5A SC88
MOSFET Transistor, N Channel, 1.5 A, 20 V, 0.057 ohm, 4.5 V, 700 mV RoHS Compliant: Yes
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 015980-FDG327N | FDG327NTR-ND | 278-FDG327N | FDG327N | FDG327N | 31Y1367 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDG327N | Single FETs, MOSFETs | SMD 20V 1.5A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet Transistor, N Channel, 1.5 A, 20 V, 0.057 Ohm, 4.5 V, 700 Mv Rohs Compliant Onsemi |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |
| V(BR)DSS | 20 volts | 20 volts | ||||
| PD | 420 milliwatts | 420 milliwatts | 420 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
