onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDG316P FDG316P

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 015979-FDG316P Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 750mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-70-6 Dimension: 6-TSSOP, SC-88, SOT-363 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 1.6A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 5nC @ 10V Max Input Capacitance: 165pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 190 mOhm @ 1.6A, 10V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Sufficient Quantity per package: 3k pcs
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 015979-FDG316P Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 750mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-70-6 Dimension: 6-TSSOP, SC-88, SOT-363 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 1.6A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 5nC @ 10V Max Input Capacitance: 165pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 190 mOhm @ 1.6A, 10V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Sufficient Quantity per package: 3k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDG316P - 015979-FDG316P - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDG316P
015979-FDG316P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDG316P 015979-FDG316P
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 015979-FDG316P Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 750mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-70-6 Dimension: 6-TSSOP, SC-88, SOT-363 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 1.6A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 5nC @ 10V Max Input Capacitance: 165pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 190 mOhm @ 1.6A, 10V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Sufficient Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015979-FDG316P
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 750mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-70-6
Dimension: 6-TSSOP, SC-88, SOT-363
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 1.6A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 5nC @ 10V
Max Input Capacitance: 165pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 190 mOhm @ 1.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Sufficient
Quantity per package: 3k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FDG316PTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDG316PTR-ND
Single FETs, MOSFETs FDG316PTR-ND
P-Channel 30V 1.6A (Ta) 750mW (Ta) Surface Mount SC-88 (SC-70-6)

P-Channel 30V 1.6A (Ta) 750mW (Ta) Surface Mount SC-88 (SC-70-6)

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET
FDG316P
MOSFET FDG316P
MOSFET SC70-6 P-CH -30V

MOSFET SC70-6 P-CH -30V

Buy Now Datasheet
Mosfet Transistor, P Channel, 1.6 A, 30 V, 190 Mohm, -10 V, -1.6 V Rohs Compliant Onsemi - 47T5026 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, P Channel, 1.6 A, 30 V, 190 Mohm, -10 V, -1.6 V Rohs Compliant Onsemi
47T5026
Mosfet Transistor, P Channel, 1.6 A, 30 V, 190 Mohm, -10 V, -1.6 V Rohs Compliant Onsemi 47T5026
MOSFET Transistor, P Channel, 1.6 A, 30 V, 190 mohm, -10 V, -1.6 V RoHS Compliant: Yes

MOSFET Transistor, P Channel, 1.6 A, 30 V, 190 mohm, -10 V, -1.6 V RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDG316P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDG316P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDG316P
MOSFET P-CH 30V 1.6A SC88

MOSFET P-CH 30V 1.6A SC88

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 015979-FDG316P FDG316PTR-ND FDG316P 47T5026 FDG316P
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDG316P Single FETs, MOSFETs MOSFET Mosfet Transistor, P Channel, 1.6 A, 30 V, 190 Mohm, -10 V, -1.6 V Rohs Compliant Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel P-Channel
V(BR)DSS 30 volts
PD 750 milliwatts
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