onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDG315N FDG315N

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 015978-FDG315N Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 750mW (Ta) Family Name: FDG315N Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-70-6 Dimension: 6-TSSOP, SC-88, SOT-363 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 2A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 4nC @ 5V Max Input Capacitance: 220pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 120 mOhm @ 2A, 10V Alternative Parts (Cross-Reference): BSD316SNL6327ZT; BSD316SNL6327; BSD316SNL6327XT; BSD316SN; Introduction Date: September 18, 2000 ECCN: EAR99 Country of Origin: China, Philippines Estimated EOL Date: 2021 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Sufficient Quantity per package: 3k pcs
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 015978-FDG315N Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 750mW (Ta) Family Name: FDG315N Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-70-6 Dimension: 6-TSSOP, SC-88, SOT-363 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 2A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 4nC @ 5V Max Input Capacitance: 220pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 120 mOhm @ 2A, 10V Alternative Parts (Cross-Reference): BSD316SNL6327ZT; BSD316SNL6327; BSD316SNL6327XT; BSD316SN; Introduction Date: September 18, 2000 ECCN: EAR99 Country of Origin: China, Philippines Estimated EOL Date: 2021 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Sufficient Quantity per package: 3k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDG315N - 015978-FDG315N - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDG315N
015978-FDG315N
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDG315N 015978-FDG315N
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 015978-FDG315N Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 750mW (Ta) Family Name: FDG315N Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-70-6 Dimension: 6-TSSOP, SC-88, SOT-363 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 2A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 4nC @ 5V Max Input Capacitance: 220pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 120 mOhm @ 2A, 10V Alternative Parts (Cross-Reference): BSD316SNL6327ZT; BSD316SNL6327; BSD316SNL6327XT; BSD316SN; Introduction Date: September 18, 2000 ECCN: EAR99 Country of Origin: China, Philippines Estimated EOL Date: 2021 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Sufficient Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015978-FDG315N
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 750mW (Ta)
Family Name: FDG315N
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-70-6
Dimension: 6-TSSOP, SC-88, SOT-363
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 2A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 4nC @ 5V
Max Input Capacitance: 220pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 120 mOhm @ 2A, 10V
Alternative Parts (Cross-Reference): BSD316SNL6327ZT; BSD316SNL6327; BSD316SNL6327XT; BSD316SN;
Introduction Date: September 18, 2000
ECCN: EAR99
Country of Origin: China, Philippines
Estimated EOL Date: 2021
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Sufficient
Quantity per package: 3k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FDG315N - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDG315N
Single FETs, MOSFETs FDG315N
MOSFET N-CH 30V 2A SC88

MOSFET N-CH 30V 2A SC88

Supplier's Site Datasheet
Single FETs, MOSFETs - FDG315NTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDG315NTR-ND
Single FETs, MOSFETs FDG315NTR-ND
N-Channel 30V 2A (Ta) 750mW (Ta) Surface Mount SC-88 (SC-70-6)

N-Channel 30V 2A (Ta) 750mW (Ta) Surface Mount SC-88 (SC-70-6)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDG315N - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDG315N
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDG315N
MOSFET N-CH 30V 2A SC88

MOSFET N-CH 30V 2A SC88

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
FDG315N
MOSFET FDG315N
MOSFET SC70-6 N-CH 30V

MOSFET SC70-6 N-CH 30V

Buy Now Datasheet
N Channel Mosfet, 30V, 2A, Sc-70; Transistor Polarity Onsemi - 58K1445 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 30V, 2A, Sc-70; Transistor Polarity Onsemi
58K1445
N Channel Mosfet, 30V, 2A, Sc-70; Transistor Polarity Onsemi 58K1445
N CHANNEL MOSFET, 30V, 2A, SC-70; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:2A; On Resistance Rds(on):0.12ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes

N CHANNEL MOSFET, 30V, 2A, SC-70; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:2A; On Resistance Rds(on):0.12ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 015978-FDG315N FDG315N FDG315NTR-ND FDG315N FDG315N 58K1445
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDG315N Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N Channel Mosfet, 30V, 2A, Sc-70; Transistor Polarity Onsemi
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 30 volts 30 volts
PD 750 milliwatts 750 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; SC-70-6 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 TO-3
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