onsemi Single FETs, MOSFETs FDG313N

Description
N-Channel 25V 950mA (Ta) 750mW (Ta) Surface Mount SC-88 (SC-70-6)
Request a Quote Datasheet
Description
N-Channel 25V 950mA (Ta) 750mW (Ta) Surface Mount SC-88 (SC-70-6)
Request a Quote Datasheet

Suppliers

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Description
Supplier Links
Single FETs, MOSFETs - FDG313NFSTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDG313NFSTR-ND
Single FETs, MOSFETs FDG313NFSTR-ND
N-Channel 25V 950mA (Ta) 750mW (Ta) Surface Mount SC-88 (SC-70-6)

N-Channel 25V 950mA (Ta) 750mW (Ta) Surface Mount SC-88 (SC-70-6)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDG313N - 015977-FDG313N - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDG313N
015977-FDG313N
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDG313N 015977-FDG313N
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 015977-FDG313N Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 750mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-70-6 Dimension: 6-TSSOP, SC-88, SOT-363 Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 950mA (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 2.3nC @ 4.5V Max Input Capacitance: 50pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 450 mOhm @ 500mA, 4.5V Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Sufficient Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015977-FDG313N
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 750mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-70-6
Dimension: 6-TSSOP, SC-88, SOT-363
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 950mA (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 2.3nC @ 4.5V
Max Input Capacitance: 50pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 450 mOhm @ 500mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Sufficient
Quantity per package: 3k pcs

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDG313N - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDG313N
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDG313N
MOSFET N-CH 25V 950MA SC88

MOSFET N-CH 25V 950MA SC88

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDG313NFSTR-ND 015977-FDG313N FDG313N
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDG313N Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type 6-TSSOP, SC-88, SOT-363 SOT3; SC-70-6 6-TSSOP, SC-88, SOT-363
V(BR)DSS 25 volts
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