onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDG312P FDG312P

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015976-FDG312P
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 750mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-70-6
Dimension: 6-TSSOP, SC-88, SOT-363
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 1.2A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 5nC @ 4.5V
Max Input Capacitance: 330pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 180 mOhm @ 1.2A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Sufficient
Quantity per package: 3k pcs

P-Channel JFET, -20V, 1.2A, 180mΩ, SC, Surface Mount Product overview: FDG312P from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, SMD, -20V, 1.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, -20V, 1.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDG312P can be used for catalog matching and distributor lookup.