onsemi 20V 1.9A MOSFET Transistor FDG311N

Description
MOSFET N-CH 20V 1.9A SC88 Product overview: FDG311N from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 1.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 1.9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDG311N can be used for catalog matching and distributor lookup.
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Description
MOSFET N-CH 20V 1.9A SC88 Product overview: FDG311N from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 1.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 1.9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDG311N can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore
20V 1.9A MOSFET Transistor
278-FDG311N
20V 1.9A MOSFET Transistor 278-FDG311N
MOSFET N-CH 20V 1.9A SC88 Product overview: FDG311N from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 1.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 1.9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDG311N can be used for catalog matching and distributor lookup.

MOSFET N-CH 20V 1.9A SC88 Product overview: FDG311N from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 1.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 1.9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDG311N can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDG311N - 015975-FDG311N - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDG311N
015975-FDG311N
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDG311N 015975-FDG311N
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 015975-FDG311N Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 750mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-70-6 Dimension: 6-TSSOP, SC-88, SOT-363 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 1.9A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 4.5nC @ 4.5V Max Input Capacitance: 270pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 115 mOhm @ 1.9A, 4.5V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Sufficient Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015975-FDG311N
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 750mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-70-6
Dimension: 6-TSSOP, SC-88, SOT-363
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 1.9A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 4.5nC @ 4.5V
Max Input Capacitance: 270pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 115 mOhm @ 1.9A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Sufficient
Quantity per package: 3k pcs

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET
FDG311N
MOSFET FDG311N
MOSFET SC70-6 N-CH 20V

MOSFET SC70-6 N-CH 20V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDG311N - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDG311N
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDG311N
MOSFET N-CH 20V 1.9A SC88

MOSFET N-CH 20V 1.9A SC88

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 278-FDG311N 015975-FDG311N FDG311N FDG311N
Product Name 20V 1.9A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDG311N MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PD 750 milliwatts 750 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type Bulk SOT3; SC-70-6 6-TSSOP, SC-88, SOT-363
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