onsemi Single FETs, MOSFETs FDFS6N303

Description
MOSFET N-CH 30V 6A 8SOIC
Request a Quote Datasheet
Description
MOSFET N-CH 30V 6A 8SOIC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDFS6N303 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDFS6N303
Single FETs, MOSFETs FDFS6N303
MOSFET N-CH 30V 6A 8SOIC

MOSFET N-CH 30V 6A 8SOIC

Supplier's Site
Single FETs, MOSFETs - FDFS6N303TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDFS6N303TR-ND
Single FETs, MOSFETs FDFS6N303TR-ND
N-Channel 30V 6A (Ta) 900mW (Ta) Surface Mount 8-SOIC

N-Channel 30V 6A (Ta) 900mW (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDFS6N303 - 112242-FDFS6N303 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDFS6N303
112242-FDFS6N303
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDFS6N303 112242-FDFS6N303
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 112242-FDFS6N303 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Schottky Diode (Isolated) Polarity: N-Channel Power Dissipation (Max): 900mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 6A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 17nC @ 10V Max Input Capacitance: 350pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 35 mOhm @ 6A, 10V Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 112242-FDFS6N303
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Schottky Diode (Isolated)
Polarity: N-Channel
Power Dissipation (Max): 900mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 17nC @ 10V
Max Input Capacitance: 350pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 35 mOhm @ 6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
30V 6A SOIC MOSFET Transistor
278-FDFS6N303
30V 6A SOIC MOSFET Transistor 278-FDFS6N303
N-CH MOSFET 30V 6A 35mR SOIC Product overview: FDFS6N303 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 6A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 6A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDFS6N303 can be used for catalog matching and distributor lookup.

N-CH MOSFET 30V 6A 35mR SOIC Product overview: FDFS6N303 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 6A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 6A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDFS6N303 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDFS6N303 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDFS6N303
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDFS6N303
MOSFET N-CH 30V 6A 8SOIC

MOSFET N-CH 30V 6A 8SOIC

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDFS6N303 FDFS6N303TR-ND 112242-FDFS6N303 278-FDFS6N303 FDFS6N303
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDFS6N303 30V 6A SOIC MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 30 volts 30 volts
IDSS 6000 milliamps
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