P-Channel MOSFET, -60V, -3A, 110mR, SOIC, Surface Mount Product overview: FDFS2P106A from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, SMD, -60V, -3A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, -60V, -3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDFS2P106A can be used for catalog matching and distributor lookup.
P-Channel 60V 3A (Ta) 900mW (Ta) Surface Mount 8-SOIC
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015973-FDFS2P106A
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Schottky Diode (Isolated)
Polarity: P-Channel
Power Dissipation (Max): 900mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOIC
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 3A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 21nC @ 10V
Max Input Capacitance: 714pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 110 mOhm @ 3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500
MOSFET P-CH 60V 3A 8SOIC
TRANSISTOR POLARITY:P CHANNEL; CONTINUOUS DRAIN CURRENT ID:3A; DRAIN SOURCE VOLTAGE VDS:-60V; ON RESISTANCE RDS(ON):0.091OHM; RDS(ON) TEST VOLTAGE VGS:20V; THRESHOLD VOLTAGE VGS:-1.6V; POWER DISSIPATION PD:2MW; NO. OF PINS:8PINS ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
MOSFET P-CH 60V 3A 8SOIC
P CHANNEL MOSFET, -60V, 3A, SOIC, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:1.6V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Radwell International | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-FDFS2P106A | FDFS2P106ATR-ND | 015973-FDFS2P106A | FDFS2P106A | 16114718 | FDFS2P106A | 82C2467 |
| Product Name | P-Channel SMD -60V -3A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDFS2P106A | Single FETs, MOSFETs | Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | P Channel Mosfet, -60V, 3A, Soic, Full Reel; Channel Type Onsemi |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | ||
| PD | 900 milliwatts | 900 milliwatts | 900 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | SOT3; 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154, 3.90mm Width) | TO-3 |
