onsemi 30V 5.3A SOIC MOSFET Transistor FDFS2P103A

P-CH MOSFET 30V 5.3A 59mR SOIC Product overview: FDFS2P103A from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 5.3A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 5.3A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDFS2P103A can be used for catalog matching and distributor lookup.

P-Channel 30V 5.3A (Ta) 900mW (Ta) Surface Mount 8-SOIC

Manufacturer: ON Semiconductor
Win Source Part Number: 1173790-FDFS2P103A
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
FET Feature: Schottky Diode (Isolated)
Transistor Polarity: P-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.fairchildsemi.com
Manufacturer Package: 8-SOIC
Power Dissipation (Maximum): 900mW
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 30V
Id - Continuous Drain Current: 5.3A
Rds On (Maximum) at Id, Vgs: 59mOhm at 5.3A, 10V
Gate Source Voltage(th) (Maximum) at Id: 3V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 8nC at 5V
Gate Source Voltage (Maximum): ±25V
Input Capacitance (Ciss) (Maximum) at Vds: 535pF at 15V