onsemi MOSFET Transistor FDFMA3P029Z

Description
Small Signal Field-Effect Transistor
Request a Quote Datasheet
Description
Small Signal Field-Effect Transistor
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - FDFMA3P029Z - Rochester Electronics
Newburyport, MA, United States
Small Signal Field-Effect Transistor

Small Signal Field-Effect Transistor

Supplier's Site Datasheet
 - FDFMA3P029Z - Rochester Electronics
Newburyport, MA, United States
Small Signal Field-Effect Transistor

Small Signal Field-Effect Transistor

Supplier's Site Datasheet
Singapore, Singapore
MOSFET Transistor
278-FDFMA3P029Z
MOSFET Transistor 278-FDFMA3P029Z
Small Signal Field-Effect Transistor Product overview: FDFMA3P029Z from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDFMA3P029Z can be used for catalog matching and distributor lookup.

Small Signal Field-Effect Transistor Product overview: FDFMA3P029Z from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDFMA3P029Z can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1058788-FDFMA3P029Z - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1058788-FDFMA3P029Z
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1058788-FDFMA3P029Z
Win Source Part Number: 1058788-FDFMA3P029Z Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: PowerTrench® Package: Bulk Standard Package: 1 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: P-Channel FET Feature: Schottky Diode (Isolated) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta) Rds On (Max) @ Id, Vgs: 87mOhm @ 3.3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.4W (Ta) Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-MLP (2x2) Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 15 V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): IRLML9301TRPBF; IRLML6346TRPBF; IRLHS6376TRPBF; DMP3130L-7; FDC654P; DMP3085LSD-13; ECCN: EAR99 Fake Threat In the Open Market: 75 pct. HTSUS: 8542.39.0001 Mfr: Fairchild Semiconductor Other Names: 2156-FDFMA3P029Z,FAI FSCFDFMA3P029Z

Win Source Part Number: 1058788-FDFMA3P029Z
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: PowerTrench®
Package: Bulk
Standard Package: 1
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
FET Feature: Schottky Diode (Isolated)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Rds On (Max) @ Id, Vgs: 87mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.4W (Ta)
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-MLP (2x2)
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 15 V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): IRLML9301TRPBF; IRLML6346TRPBF; IRLHS6376TRPBF; DMP3130L-7; FDC654P; DMP3085LSD-13;
ECCN: EAR99
Fake Threat In the Open Market: 75 pct.
HTSUS: 8542.39.0001
Mfr: Fairchild Semiconductor
Other Names: 2156-FDFMA3P029Z,FAIFSCFDFMA3P029Z

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDFMA3P029Z - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDFMA3P029Z
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDFMA3P029Z
MOSFET P-CH 30V 3.3A 6MICROFET

MOSFET P-CH 30V 3.3A 6MICROFET

Supplier's Site

Technical Specifications

  Rochester Electronics ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category RF MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDFMA3P029Z 278-FDFMA3P029Z 1058788-FDFMA3P029Z FDFMA3P029Z
Product Name MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type DFN6 SOT3 10 nC @ 10 V
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