onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDFMA3N109 FDFMA3N109

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 015972-FDFMA3N109 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Schottky Diode (Isolated) Polarity: N-Channel Power Dissipation (Max): 1.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-MicroFET (2x2) Dimension: 6-VDFN Exposed Pad Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 2.9A (Tc) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 3nC @ 4.5V Max Input Capacitance: 220pF @ 15V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 123 mOhm @ 2.9A, 4.5V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Sufficient Quantity per package: 3k pcs
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 015972-FDFMA3N109 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Schottky Diode (Isolated) Polarity: N-Channel Power Dissipation (Max): 1.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-MicroFET (2x2) Dimension: 6-VDFN Exposed Pad Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 2.9A (Tc) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 3nC @ 4.5V Max Input Capacitance: 220pF @ 15V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 123 mOhm @ 2.9A, 4.5V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Sufficient Quantity per package: 3k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDFMA3N109 - 015972-FDFMA3N109 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDFMA3N109
015972-FDFMA3N109
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDFMA3N109 015972-FDFMA3N109
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 015972-FDFMA3N109 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Schottky Diode (Isolated) Polarity: N-Channel Power Dissipation (Max): 1.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-MicroFET (2x2) Dimension: 6-VDFN Exposed Pad Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 2.9A (Tc) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 3nC @ 4.5V Max Input Capacitance: 220pF @ 15V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 123 mOhm @ 2.9A, 4.5V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Sufficient Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015972-FDFMA3N109
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Schottky Diode (Isolated)
Polarity: N-Channel
Power Dissipation (Max): 1.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-MicroFET (2x2)
Dimension: 6-VDFN Exposed Pad
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 2.9A (Tc)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 3nC @ 4.5V
Max Input Capacitance: 220pF @ 15V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 123 mOhm @ 2.9A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Sufficient
Quantity per package: 3k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FDFMA3N109FSTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDFMA3N109FSTR-ND
Single FETs, MOSFETs FDFMA3N109FSTR-ND
N-Channel 30V 2.9A (Tc) 1.5W (Ta) Surface Mount 6-MicroFET (2x2)

N-Channel 30V 2.9A (Tc) 1.5W (Ta) Surface Mount 6-MicroFET (2x2)

Buy Now Datasheet
Single FETs, MOSFETs - FDFMA3N109 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDFMA3N109
Single FETs, MOSFETs FDFMA3N109
SMALL SIGNAL FIELD-EFFECT TRANSI

SMALL SIGNAL FIELD-EFFECT TRANSI

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET PowerTrench MOSFET and Schottky Diode

MOSFET PowerTrench MOSFET and Schottky Diode

Buy Now Datasheet
MOSFET PowerTrench MOSFET and Schottky Diode - 598-FDFMA3N109 - Utmel Electronic Limited
Hong Kong, China
MOSFET PowerTrench MOSFET and Schottky Diode
598-FDFMA3N109
MOSFET PowerTrench MOSFET and Schottky Diode 598-FDFMA3N109
MOSFET PowerTrench MOSFET and Schottky Diode

MOSFET PowerTrench MOSFET and Schottky Diode

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDFMA3N109 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDFMA3N109
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDFMA3N109
MOSFET N-CH 30V 2.9A 6MICROFET

MOSFET N-CH 30V 2.9A 6MICROFET

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) VAST STOCK CO., LIMITED Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 015972-FDFMA3N109 FDFMA3N109FSTR-ND FDFMA3N109 FDFMA3N109 598-FDFMA3N109 FDFMA3N109
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDFMA3N109 Single FETs, MOSFETs Single FETs, MOSFETs MOSFET MOSFET PowerTrench MOSFET and Schottky Diode Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 30 volts 30 volts 30 volts
PD 1500 milliwatts 1500 milliwatts 1500 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; 6-MicroFET (2x2) 6-VDFN Exposed Pad 6-VDFN Exposed Pad 6-VDFN Exposed Pad
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