onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDFMA3N109 FDFMA3N109

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015972-FDFMA3N109
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Schottky Diode (Isolated)
Polarity: N-Channel
Power Dissipation (Max): 1.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-MicroFET (2x2)
Dimension: 6-VDFN Exposed Pad
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 2.9A (Tc)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 3nC @ 4.5V
Max Input Capacitance: 220pF @ 15V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 123 mOhm @ 2.9A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Sufficient
Quantity per package: 3k pcs

N-Channel MOSFET & Schottky Diode, 30V, 2.9A, 123mR, SOT-363 Product overview: FDFMA3N109 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, Schottky, 30V, 2.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Schottky, 30V, 2.9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDFMA3N109 can be used for catalog matching and distributor lookup.

N-Channel 30V 2.9A (Tc) 1.5W (Ta) Surface Mount 6-MicroFET (2x2)

SMALL SIGNAL FIELD-EFFECT TRANSI