onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDFMA2P853T FDFMA2P853T

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038136-FDFMA2P853T Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Schottky Diode (Isolated) Polarity: P-Channel Power Dissipation (Max): 1.4W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: MicroFET 2x2 Thin Dimension: 6-UDFN Exposed Pad Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 3A (Ta) Gate-Source Threshold Voltage: 1.3V @ 250μA Max Gate Charge: 6nC @ 4.5V Max Input Capacitance: 435pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 120 mOhm @ 3A, 4.5V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038136-FDFMA2P853T Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Schottky Diode (Isolated) Polarity: P-Channel Power Dissipation (Max): 1.4W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: MicroFET 2x2 Thin Dimension: 6-UDFN Exposed Pad Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 3A (Ta) Gate-Source Threshold Voltage: 1.3V @ 250μA Max Gate Charge: 6nC @ 4.5V Max Input Capacitance: 435pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 120 mOhm @ 3A, 4.5V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance
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Suppliers

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Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDFMA2P853T - 1038136-FDFMA2P853T - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDFMA2P853T
1038136-FDFMA2P853T
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDFMA2P853T 1038136-FDFMA2P853T
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038136-FDFMA2P853T Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Schottky Diode (Isolated) Polarity: P-Channel Power Dissipation (Max): 1.4W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: MicroFET 2x2 Thin Dimension: 6-UDFN Exposed Pad Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 3A (Ta) Gate-Source Threshold Voltage: 1.3V @ 250μA Max Gate Charge: 6nC @ 4.5V Max Input Capacitance: 435pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 120 mOhm @ 3A, 4.5V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038136-FDFMA2P853T
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Schottky Diode (Isolated)
Polarity: P-Channel
Power Dissipation (Max): 1.4W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: MicroFET 2x2 Thin
Dimension: 6-UDFN Exposed Pad
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3A (Ta)
Gate-Source Threshold Voltage: 1.3V @ 250μA
Max Gate Charge: 6nC @ 4.5V
Max Input Capacitance: 435pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 120 mOhm @ 3A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - FDFMA2P853TTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDFMA2P853TTR-ND
Single FETs, MOSFETs FDFMA2P853TTR-ND
P-Channel 20V 3A (Ta) 1.4W (Ta) Surface Mount 7-SOIC

P-Channel 20V 3A (Ta) 1.4W (Ta) Surface Mount 7-SOIC

Buy Now Datasheet
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDFMA2P853T
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDFMA2P853T
MOSFET P-CH 20V 3A MICROFET

MOSFET P-CH 20V 3A MICROFET

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Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1038136-FDFMA2P853T FDFMA2P853TTR-ND FDFMA2P853T
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDFMA2P853T Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel
V(BR)DSS 20 volts
PD 1400 milliwatts
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