onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDFMA2P029Z FDFMA2P029Z

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015969-FDFMA2P029Z
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Schottky Diode (Isolated)
Polarity: P-Channel
Power Dissipation (Max): 1.4W (Tj)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-MicroFET (2x2)
Dimension: 6-VDFN Exposed Pad
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3.1A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 10nC @ 4.5V
Max Input Capacitance: 720pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 95 mOhm @ 3.1A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs

P-Channel 20V 3.1A (Ta) 1.4W (Tj) Surface Mount 6-MicroFET (2x2)

P-CH JFET, -20V, 3.1A, 95mR, Surface Mount Product overview: FDFMA2P029Z from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, -20V, 3.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, -20V, 3.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDFMA2P029Z can be used for catalog matching and distributor lookup.