onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDFMA2P029Z FDFMA2P029Z

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 015969-FDFMA2P029Z Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Schottky Diode (Isolated) Polarity: P-Channel Power Dissipation (Max): 1.4W (Tj) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-MicroFET (2x2) Dimension: 6-VDFN Exposed Pad Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 3.1A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 10nC @ 4.5V Max Input Capacitance: 720pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 95 mOhm @ 3.1A, 4.5V Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 015969-FDFMA2P029Z Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Schottky Diode (Isolated) Polarity: P-Channel Power Dissipation (Max): 1.4W (Tj) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-MicroFET (2x2) Dimension: 6-VDFN Exposed Pad Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 3.1A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 10nC @ 4.5V Max Input Capacitance: 720pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 95 mOhm @ 3.1A, 4.5V Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDFMA2P029Z - 015969-FDFMA2P029Z - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDFMA2P029Z
015969-FDFMA2P029Z
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDFMA2P029Z 015969-FDFMA2P029Z
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 015969-FDFMA2P029Z Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Schottky Diode (Isolated) Polarity: P-Channel Power Dissipation (Max): 1.4W (Tj) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-MicroFET (2x2) Dimension: 6-VDFN Exposed Pad Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 3.1A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 10nC @ 4.5V Max Input Capacitance: 720pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 95 mOhm @ 3.1A, 4.5V Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015969-FDFMA2P029Z
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Schottky Diode (Isolated)
Polarity: P-Channel
Power Dissipation (Max): 1.4W (Tj)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-MicroFET (2x2)
Dimension: 6-VDFN Exposed Pad
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3.1A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 10nC @ 4.5V
Max Input Capacitance: 720pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 95 mOhm @ 3.1A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs

Buy Now Datasheet
Single FETs, MOSFETs - FDFMA2P029ZTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDFMA2P029ZTR-ND
Single FETs, MOSFETs FDFMA2P029ZTR-ND
P-Channel 20V 3.1A (Ta) 1.4W (Tj) Surface Mount 6-MicroFET (2x2)

P-Channel 20V 3.1A (Ta) 1.4W (Tj) Surface Mount 6-MicroFET (2x2)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDFMA2P029Z - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDFMA2P029Z
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDFMA2P029Z
MOSFET P-CH 20V 3.1A 6MICROFET

MOSFET P-CH 20V 3.1A 6MICROFET

Supplier's Site
Sheung Wan, Hong Kong
MOSFET -20V P-Channel PT MFET SCHOTTKY

MOSFET -20V P-Channel PT MFET SCHOTTKY

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 015969-FDFMA2P029Z FDFMA2P029ZTR-ND FDFMA2P029Z FDFMA2P029Z
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDFMA2P029Z Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity P-Channel; P-Channel P-Channel
V(BR)DSS 20 volts
PD 1400 milliwatts
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