P-Channel 20V 3.1A (Ta) 1.4W (Tj) Surface Mount 6-MicroFET (2x2)
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015969-FDFMA2P029Z
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Schottky Diode (Isolated)
Polarity: P-Channel
Power Dissipation (Max): 1.4W (Tj)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-MicroFET (2x2)
Dimension: 6-VDFN Exposed Pad
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3.1A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 10nC @ 4.5V
Max Input Capacitance: 720pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 95 mOhm @ 3.1A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs
MOSFET P-CH 20V 3.1A 6MICROFET
MOSFET -20V P-Channel PT MFET SCHOTTKY
| DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDFMA2P029ZTR-ND | 015969-FDFMA2P029Z | FDFMA2P029Z | FDFMA2P029Z |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDFMA2P029Z | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | P-Channel | P-Channel; P-Channel | ||
| Package Type | 6-VDFN Exposed Pad | SOT3; 6-MicroFET (2x2) | 10 nC @ 4.5 V | |
| V(BR)DSS | 20 volts |
