FDFMA2N028Z - Small Signal Field-Effect Transistor, 3.7A, 20V, N-Channel, MOSFET
FDFMA2N028Z - Small Signal Field-Effect Transistor, 3.7A, 20V, N-Channel, MOSFET
N-Channel 20V 3.7A (Ta) 1.4W (Tj) Surface Mount 6-MicroFET (2x2)
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015968-FDFMA2N028Z
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Schottky Diode (Isolated)
Polarity: N-Channel
Power Dissipation (Max): 1.4W (Tj)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-MicroFET (2x2)
Dimension: 6-VDFN Exposed Pad
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3.7A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 6nC @ 4.5V
Max Input Capacitance: 455pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 68 mOhm @ 3.7A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs
MOSFET, N-CH, 20V, 3.7A, UFET-6; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:3.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes
MOSFET 20V N-Ch PT MFET SCHOTTKY
MOSFET N-CH 20V 3.7A 6MICROFET
MOSFET 20V N-Ch PT MFET SCHOTTKY
| Rochester Electronics | DigiKey | Win Source Electronics | Newark, An Avnet Company | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | RF MOSFET Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDFMA2N028Z | FDFMA2N028ZTR-ND | 015968-FDFMA2N028Z | 52M3167 | 598-FDFMA2N028Z | FDFMA2N028Z | FDFMA2N028Z |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDFMA2N028Z | Mosfet, N-Ch, 20V, 3.7A, Ufet-6; Channel Type Onsemi | MOSFET 20V N-Ch PT MFET SCHOTTKY | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| Package Type | DFN6 | 6-VDFN Exposed Pad | SOT3; 6-MicroFET (2x2) | TO-3 | 6-VDFN Exposed Pad | ||
| Packing Method | Tape Reel; Tape & Reel | Tape Reel; Reel - TR | Tape Reel; Tape & Reel (TR) | Tape Reel; Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT) | |||
| V(BR)DSS | 20 volts | 20 volts | |||||
| PD | 1400 milliwatts | 1400 milliwatts |
