onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDFMA2N028Z FDFMA2N028Z

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 015968-FDFMA2N028Z Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Schottky Diode (Isolated) Polarity: N-Channel Power Dissipation (Max): 1.4W (Tj) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-MicroFET (2x2) Dimension: 6-VDFN Exposed Pad Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 3.7A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 6nC @ 4.5V Max Input Capacitance: 455pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 68 mOhm @ 3.7A, 4.5V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDFMA2N028Z - 015968-FDFMA2N028Z - Win Source Electronics
    Win Source Electronics
  • FDFMA2N028Z - Rochester Electronics
    Rochester Electronics
  • FDFMA2N028Z - Rochester Electronics
    Rochester Electronics
  • Single FETs, MOSFETs - FDFMA2N028ZTR-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDFMA2N028Z - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • MOSFET 20V N-Ch PT MFET SCHOTTKY - 598-FDFMA2N028Z - Utmel Electronic Limited
    Utmel Electronic Limited
  • Mosfet, N-Ch, 20V, 3.7A, Ufet-6; Channel Type Onsemi - 52M3167 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 015968-FDFMA2N028Z Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Schottky Diode (Isolated) Polarity: N-Channel Power Dissipation (Max): 1.4W (Tj) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-MicroFET (2x2) Dimension: 6-VDFN Exposed Pad Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 3.7A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 6nC @ 4.5V Max Input Capacitance: 455pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 68 mOhm @ 3.7A, 4.5V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDFMA2N028Z - 015968-FDFMA2N028Z - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDFMA2N028Z
015968-FDFMA2N028Z
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDFMA2N028Z 015968-FDFMA2N028Z
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 015968-FDFMA2N028Z Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Schottky Diode (Isolated) Polarity: N-Channel Power Dissipation (Max): 1.4W (Tj) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-MicroFET (2x2) Dimension: 6-VDFN Exposed Pad Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 3.7A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 6nC @ 4.5V Max Input Capacitance: 455pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 68 mOhm @ 3.7A, 4.5V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015968-FDFMA2N028Z
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Schottky Diode (Isolated)
Polarity: N-Channel
Power Dissipation (Max): 1.4W (Tj)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-MicroFET (2x2)
Dimension: 6-VDFN Exposed Pad
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3.7A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 6nC @ 4.5V
Max Input Capacitance: 455pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 68 mOhm @ 3.7A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs

Buy Now Datasheet
- FDFMA2N028Z - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
FDFMA2N028Z
FDFMA2N028Z
FDFMA2N028Z - Small Signal Field-Effect Transistor, 3.7A, 20V, N-Channel, MOSFET

FDFMA2N028Z - Small Signal Field-Effect Transistor, 3.7A, 20V, N-Channel, MOSFET

Supplier's Site Datasheet
- FDFMA2N028Z - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
FDFMA2N028Z
FDFMA2N028Z
FDFMA2N028Z - Small Signal Field-Effect Transistor, 3.7A, 20V, N-Channel, MOSFET

FDFMA2N028Z - Small Signal Field-Effect Transistor, 3.7A, 20V, N-Channel, MOSFET

Supplier's Site Datasheet
Single FETs, MOSFETs - FDFMA2N028ZTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDFMA2N028ZTR-ND
Single FETs, MOSFETs FDFMA2N028ZTR-ND
N-Channel 20V 3.7A (Ta) 1.4W (Tj) Surface Mount 6-MicroFET (2x2)

N-Channel 20V 3.7A (Ta) 1.4W (Tj) Surface Mount 6-MicroFET (2x2)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDFMA2N028Z - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDFMA2N028Z
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDFMA2N028Z
MOSFET N-CH 20V 3.7A 6MICROFET

MOSFET N-CH 20V 3.7A 6MICROFET

Supplier's Site
MOSFET 20V N-Ch PT MFET SCHOTTKY - 598-FDFMA2N028Z - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET 20V N-Ch PT MFET SCHOTTKY
598-FDFMA2N028Z
MOSFET 20V N-Ch PT MFET SCHOTTKY 598-FDFMA2N028Z
MOSFET 20V N-Ch PT MFET SCHOTTKY

MOSFET 20V N-Ch PT MFET SCHOTTKY

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FDFMA2N028Z
MOSFET FDFMA2N028Z
MOSFET 20V N-Ch PT MFET SCHOTTKY

MOSFET 20V N-Ch PT MFET SCHOTTKY

Buy Now Datasheet
Mosfet, N-Ch, 20V, 3.7A, Ufet-6; Channel Type Onsemi - 52M3167 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 20V, 3.7A, Ufet-6; Channel Type Onsemi
52M3167
Mosfet, N-Ch, 20V, 3.7A, Ufet-6; Channel Type Onsemi 52M3167
MOSFET, N-CH, 20V, 3.7A, UFET-6; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:3.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes

MOSFET, N-CH, 20V, 3.7A, UFET-6; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:3.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics Rochester Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF MOSFET Transistors Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 015968-FDFMA2N028Z FDFMA2N028Z FDFMA2N028ZTR-ND FDFMA2N028Z 598-FDFMA2N028Z FDFMA2N028Z 52M3167
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDFMA2N028Z Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET 20V N-Ch PT MFET SCHOTTKY MOSFET Mosfet, N-Ch, 20V, 3.7A, Ufet-6; Channel Type Onsemi
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 20 volts 20 volts
PD 1400 milliwatts 1400 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; 6-MicroFET (2x2) DFN6 6-VDFN Exposed Pad 6-VDFN Exposed Pad TO-3
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