Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015966-FDFM2N111
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Schottky Diode (Isolated)
Polarity: N-Channel
Power Dissipation (Max): 1.7W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: MicroFET 3x3mm
Dimension: 6-MLP, Power33
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 3.8nC @ 4.5V
Max Input Capacitance: 273pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 100 mOhm @ 4A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Sufficient
Quantity per package: 3k pcs
MOSFET DUAL Pwr MOSFET & SCHOTTKY DIODE
MOSFET N-CH 20V 4A MICROFET
| Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 015966-FDFM2N111 | FDFM2N111 | FDFM2N111 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDFM2N111 | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | ||
| V(BR)DSS | 20 volts | ||
| PD | 1700 milliwatts |
