onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDFC2P100 FDFC2P100

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 114762-FDFC2P100 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Schottky Diode (Isolated) Polarity: P-Channel Power Dissipation (Max): 1.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-SSOT Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 3A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 4.7nC @ 10V Max Input Capacitance: 445pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 150 mOhm @ 3A, 4.5V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 114762-FDFC2P100 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Schottky Diode (Isolated) Polarity: P-Channel Power Dissipation (Max): 1.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-SSOT Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 3A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 4.7nC @ 10V Max Input Capacitance: 445pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 150 mOhm @ 3A, 4.5V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance
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Suppliers

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Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDFC2P100 - 114762-FDFC2P100 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDFC2P100
114762-FDFC2P100
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDFC2P100 114762-FDFC2P100
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 114762-FDFC2P100 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Schottky Diode (Isolated) Polarity: P-Channel Power Dissipation (Max): 1.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-SSOT Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 3A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 4.7nC @ 10V Max Input Capacitance: 445pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 150 mOhm @ 3A, 4.5V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 114762-FDFC2P100
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Schottky Diode (Isolated)
Polarity: P-Channel
Power Dissipation (Max): 1.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-SSOT
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 4.7nC @ 10V
Max Input Capacitance: 445pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 150 mOhm @ 3A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDFC2P100 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDFC2P100
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDFC2P100
MOSFET P-CH 20V 3A SUPERSOT6

MOSFET P-CH 20V 3A SUPERSOT6

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 114762-FDFC2P100 FDFC2P100
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDFC2P100 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel
V(BR)DSS 20 volts
PD 1500 milliwatts
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