onsemi Single FETs, MOSFETs FDD8882

Description
N-Channel 30V 12.6A (Ta), 55A (Tc) 55W (Tc) Surface Mount TO-252AA
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Description
N-Channel 30V 12.6A (Ta), 55A (Tc) 55W (Tc) Surface Mount TO-252AA
Request a Quote Datasheet

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Product
Description
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Single FETs, MOSFETs - FDD8882TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDD8882TR-ND
Single FETs, MOSFETs FDD8882TR-ND
N-Channel 30V 12.6A (Ta), 55A (Tc) 55W (Tc) Surface Mount TO-252AA

N-Channel 30V 12.6A (Ta), 55A (Tc) 55W (Tc) Surface Mount TO-252AA

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD8882 - 015964-FDD8882 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD8882
015964-FDD8882
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD8882 015964-FDD8882
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 015964-FDD8882 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 55W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252AA Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 12.6A (Ta), 55A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 33nC @ 10V Max Input Capacitance: 1260pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 11.5 mOhm @ 35A, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015964-FDD8882
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 55W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252AA
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 12.6A (Ta), 55A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 33nC @ 10V
Max Input Capacitance: 1260pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 11.5 mOhm @ 35A, 10V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance

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Sheung Wan, Hong Kong
MOSFET
FDD8882
MOSFET FDD8882
MOSFET 30V N-Channel PowerTrench MOSFET

MOSFET 30V N-Channel PowerTrench MOSFET

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDD8882 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDD8882
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDD8882
MOSFET N-CH 30V 12.6/55A TO252AA

MOSFET N-CH 30V 12.6/55A TO252AA

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Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FDD8882TR-ND 015964-FDD8882 FDD8882 FDD8882
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD8882 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK); TO-252AA Surface Mount
V(BR)DSS 30 volts
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