onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD8874 FDD8874

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 066948-FDD8874
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 110W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252AA
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 18A (Ta), 116A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 72nC @ 10V
Max Input Capacitance: 2990pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5.1 mOhm @ 35A, 10V
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Balance

POWER FIELD-EFFECT TRANSISTOR, 3 Product overview: FDD8874 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDD8874 can be used for catalog matching and distributor lookup.

MOSFET N-CH 30V 116A D-PAK