Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015959-FDD8770
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 115W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252AA
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 35A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 73nC @ 10V
Max Input Capacitance: 3720pF @ 13V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4 mOhm @ 35A, 10V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500
N-Ch MOSFET 25V 35A 4mR TO-252AA Surface Mount Product overview: FDD8770 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 25V, 35A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 25V, 35A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDD8770 can be used for catalog matching and distributor lookup.
N-Channel 25V 35A (Tc) 115W (Tc) Surface Mount TO-252AA
MOSFET N-CH 25V 35A TO252AA
N CHANNEL MOSFET, 25V, 35A TO-252AA; Channel Type:N Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:35A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:1.6V RoHS Compliant: Yes
N CHANNEL MOSFET, 25V, 35A TO-252AA, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:35A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Power Dissipation:115W RoHS Compliant: Yes
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 015959-FDD8770 | 278-FDD8770 | FDD8770TR-ND | FDD8770 | 67P3471 | 04M9090 | FDD8770 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD8770 | SMD 25V 35A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | N Channel Mosfet, 25V, 35A To-252Aa; Channel Type Onsemi | N Channel Mosfet, 25V, 35A To-252Aa, Full Reel; Channel Type Onsemi | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | ||
| V(BR)DSS | 25 volts | ||||||
| PD | 115000 milliwatts | 115000 milliwatts | 115000 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 C (-67 F) |
