N-CHANNEL POWERTRENCH MOSFET 60V
N-Channel 60V 21.5A (Ta), 50A (Tc) 3.1W (Ta), 127W (Tc) Surface Mount TO-252AA
N-Channel 60V 21.5A (Ta), 50A (Tc) 3.1W (Ta), 127W (Tc) Surface Mount TO-252AA
N-Channel 60V 21.5A (Ta), 50A (Tc) 3.1W (Ta), 127W (Tc) Surface Mount TO-252AA
MOSFETs 60V 50A 4.1ohm NCh PowerTrench MOSFET Product overview: FDD86540 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 50A, 4.1ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 50A, 4.1ohm, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDD86540 can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038125-FDD86540
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.1W (Ta), 127W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-PAK (TO-252AA)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 21.5A (Ta), 50A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 90nC @ 10V
Max Input Capacitance: 6340pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.1 mOhm @ 21.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited
Quantity per package: 2,500
MOSFET, N-CH, 60V, 136A, 127W, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:136A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0034ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.1V; Power RoHS Compliant: Yes
MOSFET 60V 50A 4.1ohm NCh PowerTrench MOSFET
MOSFET N-CH 60V 21.5A/50A DPAK
| ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FDD86540 | FDD86540FSDKR-ND | 2088-FDD86540 | 1038125-FDD86540 | 99AC9161 | FDD86540 | FDD86540 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | 60V 50A 4.1ohm MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD86540 | Mosfet, N-Ch, 60V, 136A, 127W, To-252; Transistor Polarity Onsemi | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 60 volts | 60 volts | |||||
| IDSS | 21500 milliamps | 136000 milliamps | |||||
| PD | 3100 milliwatts | 127 milliwatts | 3100 to 127000 milliwatts |