onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD86326 FDD86326

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038123-FDD86326 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.1W (Ta), 62W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-PAK (TO-252AA) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 80V Continuous Drain Current at 25°C: 8A (Ta), 37A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 19nC @ 10V Max Input Capacitance: 1035pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 23 mOhm @ 8A, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Sufficient Quantity per package: 2,500
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038123-FDD86326 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.1W (Ta), 62W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-PAK (TO-252AA) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 80V Continuous Drain Current at 25°C: 8A (Ta), 37A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 19nC @ 10V Max Input Capacitance: 1035pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 23 mOhm @ 8A, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Sufficient Quantity per package: 2,500
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD86326 - 1038123-FDD86326 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD86326
1038123-FDD86326
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD86326 1038123-FDD86326
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038123-FDD86326 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.1W (Ta), 62W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-PAK (TO-252AA) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 80V Continuous Drain Current at 25°C: 8A (Ta), 37A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 19nC @ 10V Max Input Capacitance: 1035pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 23 mOhm @ 8A, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Sufficient Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038123-FDD86326
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.1W (Ta), 62W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-PAK (TO-252AA)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 8A (Ta), 37A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 19nC @ 10V
Max Input Capacitance: 1035pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 23 mOhm @ 8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Sufficient
Quantity per package: 2,500

Buy Now Datasheet
Single FETs, MOSFETs - FDD86326DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDD86326DKR-ND
Single FETs, MOSFETs FDD86326DKR-ND
N-Channel 80V 8A (Ta), 37A (Tc) 3.1W (Ta), 62W (Tc) Surface Mount TO-252AA

N-Channel 80V 8A (Ta), 37A (Tc) 3.1W (Ta), 62W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Single FETs, MOSFETs - FDD86326TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDD86326TR-ND
Single FETs, MOSFETs FDD86326TR-ND
N-Channel 80V 8A (Ta), 37A (Tc) 3.1W (Ta), 62W (Tc) Surface Mount TO-252AA

N-Channel 80V 8A (Ta), 37A (Tc) 3.1W (Ta), 62W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Single FETs, MOSFETs - FDD86326CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDD86326CT-ND
Single FETs, MOSFETs FDD86326CT-ND
N-Channel 80V 8A (Ta), 37A (Tc) 3.1W (Ta), 62W (Tc) Surface Mount TO-252AA

N-Channel 80V 8A (Ta), 37A (Tc) 3.1W (Ta), 62W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Singapore
N-Channel 80V MOSFET Transistor
2088-FDD86326
N-Channel 80V MOSFET Transistor 2088-FDD86326
MOSFETs 80V N-Channel PowerTrench MOSFET Product overview: FDD86326 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 80V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDD86326 can be used for catalog matching and distributor lookup.

MOSFETs 80V N-Channel PowerTrench MOSFET Product overview: FDD86326 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 80V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDD86326 can be used for catalog matching and distributor lookup.

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDD86326 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDD86326
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDD86326
MOSFET N-CH 80V 8A/37A DPAK

MOSFET N-CH 80V 8A/37A DPAK

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
FDD86326
MOSFET FDD86326
MOSFET 80V N-Channel PowerTrench MOSFET

MOSFET 80V N-Channel PowerTrench MOSFET

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1038123-FDD86326 FDD86326DKR-ND 2088-FDD86326 FDD86326 FDD86326
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD86326 Single FETs, MOSFETs N-Channel 80V MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 80 volts
PD 3100 to 62000 milliwatts 62 milliwatts
TJ -55 to 150 C (-67 to 302 F)
Unlock Full Specs
to access all available technical data

Similar Products

GaAs Fet Switches - KS207 - Micross Components, Inc.
Micross Components, Inc.
Specs
Operating Frequency 15000 MHz
View Details
TRANSISTORS - Transistors (BJT) - Single - 2SA1540D - 855042-2SA1540D - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
DC - 3.7 GHz, 65 Watt, 50 V GaN RF Power Transistor - QPD1015L - Qorvo
Specs
Transistor Technology / Material GaN
Transistor Grade / Operating Range Military
Package Type NI-360
View Details
3 suppliers